Abstract:A one-third monolayer of the heavy metals Sn and Pb deposited on semiconductor substrates can lead to a $\sqrt{3}\times\sqrt{3}$ surface reconstruction, constituting an exciting triangular lattice material platform. A long history of experiments identified charge-ordered and magnetic ground states. These discoveries were accompanied by a decades-long debate of whether electron correlations or other effects involving phonons are the driving force of the symmetry-broken states. The most recent discovery of superconductivity in boron-doped Sn/Si(111) with a $T_c$ between 5K and 9K led to a renewed excitement. Here we revisit the electronic and phononic properties of Sn and Pb adatom triangular lattices on Si(111) and SiC(0001). For all materials we compute relativistic bandstructures using DFT+$U$ where $U$ is only applied to the substrate atoms in order to adjust the band gap to match the experimental value; as a consequence, some of the resulting tight-binding parameters of the metallic surface band differ substantially compared to previous studies. Remarkably, for Pb/SiC(0001) we predict Rashba spin-orbit coupling as large as 45% of the nearest-neighbor hopping energy. In addition, we compute the phonon spectra and electron-phonon coupling constants for all materials, and for Pb/Si(111) even relativistically although the inclusion of spin-orbit coupling has surprisingly little effect on the electron-phonon coupling constant. We conclude that the resulting couplings are too weak to account for electron-phonon mediated superconductivity in any of these materials.

Surface Phase Transitions Induced by Electron Mediated Adatom-Adatom Interaction.

Triangular Mott-Hubbard Insulator Phases of Sn/Si(111) and Sn/Ge(111) Surfaces

Electronic structure, spin-orbit interaction and electron-phonon coupling of triangular adatom lattices on semiconductor substrates

Multistage Transformation and Lattice Fluctuation at AgCl-Ag Interface.

Electronic Structure Evolution in the Temperature Range of Metal Insulator Transitions on Sn/Ge(111)

Surface States, Surface Metal-Insulator, and Surface Insulator-Metal Transitions

Atomic observation of phase transition in layered SnS 2 driven by in situ heating and electron beam irradiation

Ge(001)-(2 1 0 3)-Pb <-> (2 1 0 6)-Pb: low-temperature two-dimensional phase transition

Intertwined Electronic and Structural Phase Transitions in the In/Si(111) Interface

The Kinetics of Phase Transitions in Underpotentially Deposited Cu Adlayers on Au(111)

Structural Anisotropy-Driven Atomic Mechanisms of Phase Transformations in the Pt-Sn System

Inherent Simple Cubic Lattice Being Responsible for Ultrafast Solid-Phase Change of Ge2Sb2Te5

"Extraordinary" Phase Transition Revealed in a van der Waals Antiferromagnet

Quantum Phase Transitions in Interfacing Two Gapped Systems of Ordinary Fermions Driven by External Strain and Atomic Adsorption

Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)

Mechanistic Insights into Non-Adiabatic Interband Transitions on a Semiconductor Surface Induced by Hydrogen Atom Collisions

Direct Observation of Semiconductor-Metal Phase Transition in Bilayer Tungsten Diselenide Induced by Potassium Surface Functionalization.

Bond competition and phase evolution on the IrTe₂ surface

Phonon-induced electronic relaxation in a strongly correlated system: the Sn/Si(111) $(\sqrt 3 \times \sqrt 3)$ adlayer revisited

Surface Reconstruction Transition of Metals Induced by Molecular Adsorption

Liquid-Hextic-Solid Phase Transition of a Hard-Core Lattice Gas with Third Neighbor Exclusion