Sims Study on the Initial Oxidation Process of Aln Ceramic Substrate in the Air

RF Yue,Y Wang,YX Wang,CH Chen
DOI: https://doi.org/10.1016/s0169-4332(99)00128-2
IF: 6.7
1999-01-01
Applied Surface Science
Abstract:Secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD) measurement were employed to study the initial oxidation process of AlN ceramic substrate in the air at 850–1100°C. The results show that there is already a very thin O-rich layer in the surface region of untreated AlN ceramic substrate. When the sample is annealed for 10 min, the O-rich layer becomes thicker rapidly with the increasing of annealing temperature. When it is annealed at 1100°C for 20 min, a continuous oxide layer is formed. In the end, combined with chemical thermodynamics, the initial oxidation mechanism near the surface of AlN substrate is discussed.
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