Abstract:This dissertation rigorously characterizes many modern commodity DRAM devices and shows that by exploiting DRAM access timing margins within manufacturer-recommended DRAM timing specifications, we can significantly improve system performance, reduce power consumption, and improve device reliability and security. First, we characterize DRAM timing parameter margins and find that certain regions of DRAM can be accessed faster than other regions due to DRAM cell process manufacturing variation. We exploit this by enabling variable access times depending on the DRAM cells being accessed, which not only improves overall system performance, but also decreases power consumption. Second, we find that we can uniquely identify DRAM devices by the locations of failures that result when we access DRAM with timing parameters reduced below specification values. Because we induce these failures with DRAM accesses, we can generate these unique identifiers significantly more quickly than prior work. Third, we propose a random number generator that is based on our observation that timing failures in certain DRAM cells are randomly induced and can thus be repeatedly polled to very quickly generate true random values. Finally, we characterize the RowHammer security vulnerability on a wide range of modern DRAM chips while violating the DRAM refresh requirement in order to directly characterize the underlying DRAM technology without the interference of refresh commands. We demonstrate with our characterization of real chips, that existing RowHammer mitigation mechanisms either are not scalable or suffer from prohibitively large performance overheads in projected future devices and it is critical to research more effective solutions to RowHammer. Overall, our studies build a new understanding of modern DRAM devices to improve computing system performance, reliability and security all at the same time.

Performance of DRAM in Embedded System

Electrothermal Simulation of Resistive Random Access Memory(RRAM) Array Using Finite Difference Method

Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

A Performance Evaluation of DRAM Access for In-Memory Databases

A Hybrid Main Memory Architecture Design for Reducing DRAM System Refresh Power

Improving DRAM Performance, Reliability, and Security by Rigorously Understanding Intrinsic DRAM Operation

X-ray: Discovering DRAM Internal Structure and Error Characteristics by Issuing Memory Commands

Progress in Development of Resistive RAM Peripheral Circuit

Design and Implementation of RRAM Voltage Supply Circuits

System-Level Early Power Estimation for Memory Subsystem in Embedded Systems

An eDRAM with Logic Technology Using High-Speed R/W and Compact Charge Transfer Refresh Scheme

Improving DRAM Performance, Security, and Reliability by Understanding and Exploiting DRAM Timing Parameter Margins

DQN based page allocation for ReRAM main memory

Design of an Embedded High Speed Dual-Port SRAM in Display Control/Driver ICs

Design Of Almost-Nonvolatile Embedded Dram Using Nanoelectromechanical Relay Devices

Utilizing PCM for Energy Optimization in Embedded Systems

Exploring Dynamic Redundancy to Resuscitate Faulty PCM Blocks

Performance Analysis of Embedded Processor

Design of a Novel High Speed Embedded DRAM

A Logic-Based Embedded Dram With Novel Cell Structure And Dynamically Adaptive Refresh For Long Data Retention, Zero Data Availability Penalty And High Yield

Improving DRAM Performance by Parallelizing Refreshes with Accesses