Abstract:RowHammer is a circuit-level DRAM vulnerability where repeatedly accessing (i.e., hammering) a DRAM row can cause bit flips in physically nearby rows. The RowHammer vulnerability worsens as DRAM cell size and cell-to-cell spacing shrink. Recent studies demonstrate that modern DRAM chips, including chips previously marketed as RowHammer-safe, are even more vulnerable to RowHammer than older chips such that the required hammer count to cause a bit flip has reduced by more than 10X in the last decade. Therefore, it is essential to develop a better understanding and in-depth insights into the RowHammer vulnerability of modern DRAM chips to more effectively secure current and future systems. Our goal in this paper is to provide insights into fundamental properties of the RowHammer vulnerability that are not yet rigorously studied by prior works, but can potentially be i) exploited to develop more effective RowHammer attacks or ii) leveraged to design more effective and efficient defense mechanisms. To this end, we present an experimental characterization using 248 DDR4 and 24 DDR3 modern DRAM chips from four major DRAM manufacturers demonstrating how the RowHammer effects vary with three fundamental properties: 1) DRAM chip temperature, 2) aggressor row active time, and 3) victim DRAM cell’s physical location. Among our 16 new observations, we highlight that a RowHammer bit flip 1) is very likely to occur in a bounded range, specific to each DRAM cell (e.g., 5.4% of the vulnerable DRAM cells exhibit errors in the range to ), 2) is more likely to occur if the aggressor row is active for longer time (e.g., RowHammer vulnerability increases by 36% if we keep a DRAM row active for 15 column accesses), and 3) is more likely to occur in certain physical regions of the DRAM module under attack (e.g., 5% of the rows are 2x more vulnerable than the remaining 95% of the rows). Our study has important practical implications on future RowHammer attacks and defenses. We describe and analyze the implications of our new findings by proposing three future RowHammer attack and five future RowHammer defense improvements.

Improving DRAM Performance, Reliability, and Security by Rigorously Understanding Intrinsic DRAM Operation

Improving DRAM Performance, Security, and Reliability by Understanding and Exploiting DRAM Timing Parameter Margins

DRAMScope: Uncovering DRAM Microarchitecture and Characteristics by Issuing Memory Commands

Uncovering In-DRAM RowHammer Protection Mechanisms: A New Methodology, Custom RowHammer Patterns, and Implications

Self-Managing DRAM: A Low-Cost Framework for Enabling Autonomous and Efficient in-DRAM Operations

X-ray: Discovering DRAM Internal Structure and Error Characteristics by Issuing Memory Commands

Fundamentally Understanding and Solving RowHammer

Enabling Efficient and Scalable DRAM Read Disturbance Mitigation via New Experimental Insights into Modern DRAM Chips

A Deeper Look into RowHammer’s Sensitivities: Experimental Analysis of Real DRAM Chips and Implications on Future Attacks and Defenses

DRAM-Profiler: An Experimental DRAM RowHammer Vulnerability Profiling Mechanism

SoftMC: Practical DRAM Characterization Using an FPGA-Based Infrastructure

Mitigation of 1-Row Hammer in BCAT Structures Through Buried Oxide Integration and Investigation of Inter-Cell Disturbances

Understanding and Improving the Latency of DRAM-Based Memory Systems

WhistleBlower: A System-level Empirical Study on RowHammer

Dataplant: Enhancing System Security with Low-Cost In-DRAM Value Generation Primitives

Mithril: Cooperative Row Hammer Protection on Commodity DRAM Leveraging Managed Refresh

Understanding the Security Benefits and Overheads of Emerging Industry Solutions to DRAM Read Disturbance

RowHammer: Reliability Analysis and Security Implications

An Experimental Analysis of RowHammer in HBM2 DRAM Chips

An Experimental Characterization of Combined RowHammer and RowPress Read Disturbance in Modern DRAM Chips

RowHammer: A Retrospective