Abstract:Modern industry routinely uses sophisticated microscopic methods for quality control and for predicting the performance of manufactured products. These processes typically exploit optical emission and scattering phenomena—such as electron backscattered diffraction and energy-dispersive x-ray spectroscopy—using equipment attached to conventional scanning electron microscopy (SEM). In silicon-based metal oxide semiconductor (MOS) devices, residual stresses may remain from the manufacturing process owing to a mismatch in thermal expansion coefficients between constituent materials. Thermal fatigue and electromigration (displacement of atoms induced by electric current) phenomena can also affect the devices’ micromechanical state. Up to now, SEM has not been applied to these problems for two reasons. First, the effects of strain on electronic transitions arising from band-gap or optically active point defects, as well as their interaction with the electron probe, were not fully understood. Second, no comprehensive algorithm could be found that took into account the superposition of several chemical, physical, and mechanical effects (i.e., temperature gradients, self-absorption, chemical gradients) to extract the stress information from the luminescence spectrum. Yet, the spatial resolution of the SEM would be highly advantageous in residual stress assessment. We recently developed a spectroscopic method for analyzing materials and devices in the SEM that works by visualizing surface and subsurface stress fields. Further, we have used the technique to solve a number of important industrial problems, for example, the stress stored in interconnect structures (like inFigure 1. An SEM image (a) and a CL/PS stress image (b) of the immediate neighborhood of the crack tip in a gallium nitride crystal. The stress map represents the spatial variation of the trace of the stress tensor acquired with a spatial resolution of 30nm.

Visualization of Microscopic Stress Fields in Silica Glass in the Scanning Electron Microscope

Challenging Nano-Scale Stress Evaluation in Glassy and Crystalline Semiconductor Heterostructures

High-resolution Stress Assessments of Interconnect/dielectric Electronic Patterns Using Optically Active Point Defects of Silica Glass As a Stress Sensor

Interfacial Residual Stresses in Semiconductor Devices Measured on the Nano-Scale by Cathodoluminescence Piezospectroscopy

Microscopic Stress Analysis In A Luminescent Glass

Looking at the Nanomechanics of Electronic Devices under the Scanning Electronic Microscope

Contribution of Spatially and Spectrally Resolved Cathodoluminescence to Study Crack-Tip Phenomena in Silica Glass

Electro-Stimulated Piezo-Spectroscopy for Measuring Nano-Scale Residual Stress Fields in Ceramics

Stress Dependence of Paramagnetic Point Defects in Amorphous Silicon Oxide.

Quantitative Assessment of Crack-Tip Stress Field in Semiconductor GaN Using Electrostimulated Piezo-Spectroscopy

Energy-dependent correlation between micro/nano-morphology and stress state of femtosecond laser-induced modification in fused silica

Electrochemical Strain Microscopy of Silica Glasses

Stress Dependence of Optically Active Diamagnetic Point Defects in Silicon Oxynitride

Measurements of Microscopic Stresses in Si-Based Polycrystalline Ceramics

Spatially Resolved Crack-Tip Stress Analysis in Semiconductor by Cathodoluminescence Piezospectroscopy

Residual and bridging microstress fields in Al2O3/Al interpenetrating network composite evaluated by fluorescence spectroscopy

Stress-enhanced ion diffusion at the vicinity of a crack tip as evidenced by atomic force microscopy in silicate glasses

A Photo-Stimulated Spectroscopic Method for Spatially Resolved Stress Analysis in Hetero-Epitaxial Films

Effects of Applying Stress on the Electron Field Emission Properties in Amorphous Carbon Thin Films

Photoluminescence Spectroscopy to Detect Microregion Stress Distribution in Glass‐to‐metal Seals

Study of the Effects of Stress Wave Behavior in Laser-Induced Exit-Surface Damage of Fused Silica Using Time-Resolved Multi-Polariscopic Imaging