Abstract:The high-temperature oxidation mechanism of silicon carbide (SiC) is crucial for designing thermal protection systems in aircraft. This study explored the oxidative chemical reaction processes and mechanism on SiC surface and interfaces within the temperature range of 300-2300 K by using reactive molecular dynamics simulation. The oxygen impact on the silica (SiOx) growth of the SiC surface was analyzed, which shows a progressive increase of silica thickness. The simulation results indicated that the oxidation process of SiC was a typical passive oxidation mechanism. With the environmental temperature rising and oxygen impact, the increase of oxidation thickness on the SiC surface undergoes three oxidizing reaction processes: little chemical adsorption of oxygen molecules on the initial surface, rapid oxidation of silicon and carbon, and dramatic oxidation of the interface between the oxidation layer and SiC. Additionally, this work studied the mechanism of oxidation thickness growth and chemical diffusion of oxygen. The oxidation rate is weakened according to the oxygen atom diffusion barrier effect of silica repulsion. Moreover, the kinetic parameters were statistically calculated by fitting the growth of Si-O bonds and their reaction rate constants. Subsequently, the activation energy and pre-exponential factors were derived by using the Arrhenius equation to model the chemical reaction kinetics of the thermal oxidation process. The chemical reaction behaviors of the two stages could be concluded as follows: (i) in stage I, the initial oxidation is reaction rate limiting; (ii) in stage II, SiC oxidation is limited by both the oxidation reaction rate and the oxygen diffusion coefficient of the oxidation layer. The activation energy of stage II increased compared with stage I due to the oxygen atoms diffusion barrier between the oxidation layers. This study on the oxidation and ablation mechanism of the SiC surface at the atomic scale would provide insight into understanding thermal oxidation behavior and the design of ceramic materials.

Theoretical Investigation for the Active-To-Passive Transition in the Oxidation of Silicon Carbide

Static and dynamic oxidation behaviour of silicon carbide at high temperature

Temperature-Dependent Oxidation Behavior of Silicon Carbide Surface: Reactive Molecular Dynamics Simulations

Competing Atomic and Molecular Mechanisms of Thermal Oxidation

AN INTERFACE KINETICS STUDY OF OXIDATION PROCESS OF SILICON

A kinetic model involving oxidation and volatilization in SiC-B4C-xAl2O3 ceramics system

Molecular Dynamics Simulation of High-Temperature Oxidation of 3 CSiC ( 100 ) : Differences Between Si-face and C-face

A numerical oxidation model for SiC‐coated thermal protection systems in hypersonic applications

High Temperature Oxidation of Reaction-Bonded Silicon Carbide

Oxidation simulation study of silicon carbide nanowires: A carbon-rich interface state

The Influence of Environmental Temperature on the Passive Oxidation Process in the C/SiC Composite

High Temperature Oxidation Kinetics of Reaction-Bonded Silicon Carbide

The interfacial characterization of oxidized SiC(p)/2014 Al composites

Oxidation of Silicon Particles Suspended in a Mullite Matrix with Dual-Mode Vacancy Diffusion of Oxygen

High temperature oxidation behavior of reaction-bonded silicon carbide

Oxidation kinetics of SiC in microwave oxygen plasma

The passive-oxidized behavior of SiC particles and their jointing characteristics

Demonstration of non-negligible oxygen exchange in the thermal oxidation of silicon carbide

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ($0001$) Si-face and ($000\overline{1}$) C-face by using a new Si-O-C interatomic potential

Oxidation Mechanism of ZrB2/SiC Ceramics Based on Phase-Field Model

Molecular insight of the interface evolution of silicon carbide under hyperthermal atomic oxygen impact