Method to Restains the Emergence of Foreign Crystals by Doped TGS Crystals

Qiang Liang-sheng

2009-01-01

Abstract:The emergence of foreign crystals was restrained effectively by twice seedling method which accelerated the growth velocity of crystals.Problems in the growth process of crystal were analysed.The growth habit of doped crystals could be changed by controlling the pH value of the growth solution in the rounge of 1~4.

What problem does this paper attempt to address?

Optimizing Protein Crystal Growth Through Dynamic Seeding

DY Zhu,YQ Zhu,Y Xiang,DC Wang

DOI: https://doi.org/10.1107/s0907444904028768

2005-01-01

Abstract:A dynamic seeding method that is different from the conventional method of seeding drops that have been equilibrated is described. The method basically consists of two steps. Firstly, microseeding was used in association with adjustment of the seeding-drop components, including buffer, additive and concentrations of the precipitants and protein, in order to screen suitable seeding conditions under which microseeds are seeded into a new non-equilibrated drop as the dynamic macroseed drop for the following step. Secondly, after being equilibrated for various times against the reservoir solution, the macroseed drops were used to prepare a dilution series with which the qualified crystals could be harvested using macroseeding. Compared with a conventional seeding technique, this method is distinct with a dynamic situation of macroseed drops before macroseeding and a non-equilibrium serial seeding where all the seeds are seeded into new non-equilibrated drops and the micro/macroseeding are efficiently combined into a whole system. the method simplifies control of the number of microseeds because an excess of microseeds has little effect on the final result. The method also simplifies the manipulation of macroseeds by optimizing the equilibration time and the dilution multiple of the macroseed drops before macroseeding. This dynamic seeding technique has been used in the crystallization of novel protein CutCm, which has a fast crystal-growth rate, and proved that the method is useful for optimizing protein crystallization.
Study on Growth and Property of Heavy Rare Earth Dy3+ Doped TGS Crystals

CHEN Lian-fa,GUAN Chang,DING Bin,QIANG Liang-sheng

DOI: https://doi.org/10.3969/j.issn.1000-985x.2007.02.033

2007-01-01

Abstract:By choosing heavy rare earth Dy3+ as doping cation,and through DL-alamine and L-glulamatic acid partially substituting for glycine moleculars,several doped TGS crystals were successfully grown.The growth experiments and the measured results indicat that the growth of doped TGS crystals are easier than pure TGS.When the pH value of the growth solution for doped crystals is kept between 1 and 4,the growth habit of doped crystals is changed.The amount of rare earth elements in doped crystals is tested using ICP emission spectrum method.The lattice parameters are measured using X-ray powder diffraction method.The results show that the elements have entered into the crystals.But the symmertry remains C2-2.Through the measurement of ferroelectric hysteresis loops of the doped crystals,the inner bias field is received.The temperature dependence curve of pyroelectric coefficient,spontaneous polarization are measured.The influence of various dopants on the pyroelectric property and polarization restraint is analyzed,the results show that this series of TGS are excellent pyroelectric materials.
Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Zhanren Sui,Lingbo Xu,Can Cui,Rong Wang,Xiaodong Pi,Deren Yang,Xuefeng Han

DOI: https://doi.org/10.1039/d3ce01070h

IF: 3.756

2024-01-01

CrystEngComm

Abstract:Top-seeded solution growth (TSSG) is a crucial technique for producing high-quality SiC crystals, with the quality of the crystal being significantly influenced by the temperature, flow, and carbon concentration in the solution. A global numerical simulation has been performed to investigate the effects of solution height and crystal rotation in SiC crystal growth. The simulation results indicate that as the solution height increases, there are two distinct flow patterns: single-vortex pattern and double-vortex pattern. Because of the change in the flow pattern, the flow field beneath the seed crystal and free surface will undergo a significant change. The varying effects of seed crystal rotation are also demonstrated under different solution height scenarios. Increasing the rotational speed of the seed crystal will enhance the stability of the solution flow field and crystal growth rate for the single-vortex pattern. Increasing the rotational speed or solution height appropriately is beneficial for enhancing the crystal growth rate in the double-vortex pattern. Excessively high rotational speeds or solution heights, however, will reduce the rate of crystal growth. To optimize crystal growth rates, it is advisable to choose rotational speeds corresponding to specific melt heights. In this study, rotating the crystal at 20-30 rpm in a double-vortex pattern resulted in a higher average growth rate.
Growth and Properties of Manganese and Lithium Doped TGS Crystals

CS FANG,Y XI,AS BHALLA,LE CROSS

DOI: https://doi.org/10.1016/0025-5408(83)90152-6

IF: 5.6

1983-01-01

Materials Research Bulletin

Abstract:Mn+2 doped and Li+ doped TGS crystals (MTGS and LTGS) have been grown from the TGS solution containing MnSO4·H2O and Li2SO4·H2O respectively by the slow cooling method. The growth habit and domains configuration of MTGS and LTGS are altered from those of TGS crystal. The dielectric properties of both crystals are of the same order to that of TGS, but the pyroelectric coefficients are much higher than that of TGS. An internal chemical bias field has been observed in LTGS and MTGS crystals.
Study of modified tgs crystals

Chang-Shui Fang,Min Wang,Hong-Sheng Zhuo,Jian-Cheng Song,Ke-Cong Zhang

DOI: https://doi.org/10.1080/00150199308237886

1993-01-01

Ferroelectrics

Abstract:Based on the relation between the structure and spontaneous polarization of TGS crystal, some modified TGS crystals have been grown by doping with aniline-family dipolar moleculars, inorganic acids and metal ions in the crystals. The effects of different dopants on growth habit and pyroelectric properties were investigated. The experimental results show that the pyroelectric figure of merit (p/e) of these new modified TGS-ATGSP and ATGSAs are one time higher than that of pure TGS crystal. The main approach of study on the modification of TGS crystal is also discussed in this paper.

materials science, multidisciplinary,physics, condensed matter
Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Zhen Li,Johannes Will,Peng Dong,Deren Yang

DOI: https://doi.org/10.1063/1.4979307

IF: 2.877

2017-01-01

Journal of Applied Physics

Abstract:As of today, highly germanium doped Czochralski silicon crystals are used in applications. However, it is not clear how a germanium content in the range of 10(18) atoms/cm(3) influences the oxygen precipitation behavior, which is highly relevant for the gettering potential of the wafer. In this context, high energy X-ray diffraction is a promising tool to monitor real-time the strain introduced by the oxygen agglomeration and growth. Nevertheless, in particular, in the dynamical limit of X-ray diffraction and at elevated temperatures, the strain originating from the precipitation process has to be clearly distinguished from the intensity contribution of thermal vibrations. In Laue geometry, dynamical effects can even lead to an increment of the integrated intensity with temperature completely unexpected in the kinematical limit, where temperature is tackled solely by a Debye-Waller factor. In the following, an approach is presented allowing us to completely correct the influence of thermal vibrations in the dynamical limit. This approach is applied to undoped and highly germanium doped silicon crystals, clearly revealing an enhanced inventory of grown-in precipitates with germanium doping and suggesting a morphological transformation towards a phase of higher strain of the grown-in precipitates in the range between room temperature and 800 degrees C. Published by AIP Publishing.
Segregation During Crystal Growth from Melt and Absorption Cross Section Determination by Optical Absorption Method

QingLi Zhang,ShaoTang Yin,DunLu Sun,SongMing Wan

DOI: https://doi.org/10.1007/s11433-008-0064-z

2008-01-01

Abstract:Segregation during crystal growth from melt under two conditions is studied by using crystal mass, which can be measured easily, as an independent variable, and a method to determine the effective segregation coefficient and absorption cross section of optical dopant is given. When the segregated solute disperses into the whole or just a part of melt homogenously, the concentration C s in solid interface will change by different formulas. If the crystal growth interface is conical and segregated solute disperses into melt in total or part, the solute concentration at r = 2/3 R , where r is the distance from the growth cross section center and R the crystal radius, is independent on the shape of the crystal growth interface, and its variation at r = 2/3 R can be regarded as the result from crystal growth in flat interface. With C s variation formula in solid and absorption cross section σ for optical dopant, the absorption coefficients along the crystal growth direction can be calculated, and the corresponding experimental value can be obtained through the crystal optical absorption spectra. By minimizing the half sum, whose independent variables are k , Δ W or σ , of the difference square between the calculated and experimental absorption coefficients from one or more absorption peaks along the crystal growth direction, k and σ , or k and Δ W , can be determined at the same time through the Levenberg-Marquardt iteration method. Finally, the effective segregation coefficient k , Δ W and absorption cross sections of Nd:GGG were determined, the results fitted by two formula gave more closed effective segregation coefficient, and the value Δ W also indicates that the segregated dopant had nearly dispersed into the whole melt. Experimental results show that the method to determine effective segregation coefficient k , Δ W and absorption cross sections σ is convenient and reliable, and the two segregation formulas can describe the segregation during the crystal growth from melt relatively commendably.
Crystal Morphology Prediction Models and Regulating Methods

Yuan Gao,Wenxi Song,Jinyue Yang,Xiongtao Ji,Na Wang,Xin Huang,Ting Wang,Hongxun Hao

DOI: https://doi.org/10.3390/cryst14060484

IF: 2.7

2024-05-22

Crystals

Abstract:Growing high-quality crystals with ideal properties is of great importance. The morphology of crystal is one key factor reflecting product quality, as it can affect the performance of products and downstream operations. In this work, the current state of crystal morphology modification is reviewed from different perspectives. First, the most widely used crystal growth models are discussed. Then, a variety of crystal morphology control methods, which include adjustment of crystallization operation parameters, addition of foreign molecules, change of different solvents, membrane assistance, the addition of external physical fields and the use of ball milling are summarized. As for applications, the control of crystal morphology has application potential in pharmaceutical and material fields, for example, energetic materials and semiconductor materials. Finally, the future development direction of crystal morphology regulation is discussed.

materials science, multidisciplinary,crystallography
Accelerating single-crystal growth by stimulated and self-guided channeling

Yan Ren,Changfeng Fang,Chengjie Zhu,Yvonne Y. Li,Bo Durbeej,Xian Zhao,Lu Deng

DOI: https://doi.org/10.48550/arXiv.2101.11265

IF: 2.552

2021-01-27

Chemical Physics

Abstract:We report a self-guided and "stimulated" single-crystal growth acceleration effect in static super-saturated aqueous solutions, producing inorganic (KH$_2$PO$_4$) and organic (tetraphenyl-phosphonium-family) nonlinear optical single-crystals with novel morphologies. The extraordinarily fast unidirectional growth in the presence of complete lateral growth suppression defies all current impurity, defect and dislocation based crystal growth inhibition mechanisms. We propose a self-channeling-stimulated accelerated growth theory that can satisfactorily explain all experimental results. Using molecular dynamics analysis and a modified two-component crystal growth model that includes microscopic surface molecular selectivity we show the lateral growth arrest is the combined result of the self-channeling and a self-shielding effect. These single-crystals exhibit remarkable mechanical flexibility in winding and twisting, demonstrating their unique advantages for chip-size quantum and biomedical applications, as well as for production of high-yield/high-potency pharmaceutical materials.
Growing a single suspended perfect protein crystal in a fully noncontact manner

Zi-Qing Wu,Yong-Ming Liu,Qing-Di Cheng,Chen-Yuan Li,Ya-Li Liu,Wan-Yi Ge,Sven Falke,Hevila Brognaro,Jing-Jie Chen,Huan Zhou,Peng Shang,Jian-Hua He,Christian Betzel,Da-Chuan Yin

DOI: https://doi.org/10.1016/j.ijbiomac.2024.136637

IF: 8.2

2024-11-02

International Journal of Biological Macromolecules

Abstract:Nucleation is a fundamental process that determines the structure, morphology, and properties of crystalline materials, and is difficult to control because it is unpredictable. Here, we demonstrate a new method to control the protein crystal nucleation using a magnetic force, where we manipulate the movement and coalescence of nucleation precursors by adding paramagnetic salt into the crystallization solution to constrain the number and position of nucleation. We found that protein nucleation could be significantly affected by the magnetic force that the gradient magnetic fields generate. When the magnetization force is sufficiently enough, nucleation can be confined to the crystallization solution with no interface contact; therefore, only one crystal nucleus appears, which results in noncontact suspension growth of a single crystal in the crystallization solution system. Under these situations, the nucleation rate significantly decreases due to the coalescence of the dense liquid phase, and the crystal growth rate also decreases due to the suppression of convection, which increases the crystal quality. Our findings provide a new method for the noncontact control of crystal nucleation and demonstrate that externally applied physical environments can be used to affect the liquid-liquid phase separation process.

polymer science,biochemistry & molecular biology,chemistry, applied
Restraint of Nucleation of SiC Polycrystals Surrounding the Seed During SiC Single Crystal Growth

Pei Yun Dai,Yong Gui Shi,Jian Feng Yang,Yan Zhong Wang,Ji Kuan Cheng,Hong Jie Wang

DOI: https://doi.org/10.1007/s10853-011-5362-6

IF: 4.5

2011-01-01

Journal of Materials Science

Abstract:The nucleation and growth of SiC polycrystals around seed crystals restrain the growth of SiC single crystals in the radial direction fabricated by physical vapor transport method in which the ordinary graphite is used as the crucible lid. Therefore, it is necessary to reduce the nucleation and growth of SiC polycrystals around the seed crystals. In order to effectively enlarge SiC single crystals, the authors propose the use of a graphite paper instead of graphite as the lid to restrain the nucleation of SiC polycrystals on the lid. The micrographs of SiC polycrystals on the graphite paper and graphite at the different growth stages show that the nucleation of SiC polycrystals on the graphite paper is more difficult than that on graphite. X-ray diffraction and scanning electron microscope investigations show that the graphite paper possesses high-macroscopic anisotropy, which induced that polycrystals can only grow on the surface of graphite paper and be easily removed.
Controlling Nucleation During Unseeded THM Growth of CdZnTe Crystal

Bangzhao Hong,Song Zhang,Lili Zheng,Hui Zhang,Cheng Wang,Bo Zhao

DOI: https://doi.org/10.1016/j.jcrysgro.2020.125482

IF: 1.8

2020-01-01

Journal of Crystal Growth

Abstract:There are always undesired grains formed at the beginning of unseeded THM growth which deteriorate the crystal quality greatly. In this paper, several ingots with the diameter of 27 mm were grown by unseeded THM to investigate the nucleation process. The growth temperature in the experiments was 750 degrees C and the growth rate was 5 mm/day. The influence of crucible bottom geometry and temperature gradient on nucleation are studied. Numerical simulations of thermal and concentration fields were also performed for the THM process to study the growth process. The simulation results show that square cavity flow's structure and parabolic wall temperature profile are the main reason for secondary nucleation in the radial direction. Dummy crystal with cold finger was introduced in order to stabilize the thermal field and modify the lateral temperature gradient. Subsequent experimental results indicate that a large longitudinal temperature gradient with small lateral temperature gradient is more favor to suppress secondary nucleation and maintain stable growth.
INFLUENCE FACTORS ON METASTABLE ZONE IN DKDP CRYSTAL GROWTH

ZANG Hegui,CHEN Xuean,CHEN Dan,YANG Peng,TU Heng,WANG Jinshu,ZHOU Meiling

DOI: https://doi.org/10.3321/j.issn:0454-5648.2007.08.024

2007-01-01

Abstract:The main influencing factors of the stability of growth system of tetragonal potassium dideuterium phosphate (DKDP) crystal, such as the deuterium content in solution, the purity of the solution, saturation temperature, rotative velocity of crystal, the superheating temperature and period, the homogeneity of growth, the stress on the crystal from outside and the size of the seed crystal, have been studied and analyzed from the viewpoint of thermodynamics and kinetics. It is indicated that the metastable zone of tetragonal DKDP crystal growth can be widened and the starting temperature of crystal growth can be raised to 50 ℃ by using high purity raw materials, super fineness filtering (bore diameter 0.15 μm) and superheating at 10 ℃ higher than the saturation point for 20 h, so the rapid growth of DKDP crystal in all directions can be realized at the conditions of lower acidity and higher supersaturability.
Growth and Characteristics of Near-Stoichiometric Zn:LiNbO3 Crystals Grown by TSSG Method

SQ Fang,B Wang,T Zhang,FR Ling,YQ Zhao

DOI: https://doi.org/10.1016/j.matchemphys.2004.06.030

IF: 4.778

2004-01-01

Materials Chemistry and Physics

Abstract:A series of near-stoichiometric Zn:LiNbO3 (Zn:NSLN) crystals were grown by the top seed solution growth (TSSG) method using K2O as flux. Defect structures and Zn2+ occupation mechanism were analyzed and discussed by X-ray powder diffraction (XRD), differential thermal analysis (DTA), ultraviolet-visible (UV) absorption and infrared (IR) spectrum measurement. Moreover, we also found that the threshold concentration of ZnO in NSLN were between 2 and 3mol%.
Crystal growth in confinement

Felix Kohler,Olivier Pierre-Louis,Dag Kristian Dysthe

DOI: https://doi.org/10.1038/s41467-022-34330-5

IF: 16.6

2022-11-16

Nature Communications

Abstract:Abstract The growth of crystals confined in porous or cellular materials is ubiquitous in Nature and forms the basis of many industrial processes. Confinement affects the formation of biominerals in living organisms, of minerals in the Earth’s crust and of salt crystals damaging porous limestone monuments, and is also used to control the growth of artificial crystals. However, the mechanisms by which confinement alters crystal shapes and growth rates are still not elucidated. Based on novel in situ optical observations of (001) surfaces of NaClO 3 and CaCO 3 crystals at nanometric distances from a glass substrate, we demonstrate that new molecular layers can nucleate homogeneously and propagate without interruption even when in contact with other solids, raising the macroscopic crystal above them. Confined growth is governed by the peculiar dynamics of these molecular layers controlled by the two-dimensional transport of mass through the liquid film from the edges to the center of the contact, with distinctive features such as skewed dislocation spirals, kinetic localization of nucleation in the vicinity of the contact edge, and directed instabilities. Confined growth morphologies can be predicted from the values of three main dimensionless parameters.

multidisciplinary sciences
A novel approach and segregation behavior of heavily doped Nd:YAG/YAG composite structure by solid-state crystal growth

Zhong Wan,Ge Zhang,Benxue Jiang,Tao Feng,Long Zhang,Xiao Li

DOI: https://doi.org/10.1016/j.optmat.2022.112455

IF: 3.754

2022-06-01

Optical Materials

Abstract:As a prospective alternative technique for single crystal growth, solid-state crystal growth (SSCG) is applied in the fabrication of a Nd:YAG/YAG composite structure with a high Nd3+ doping concentration. The microstructure morphologies and segregation behavior in the ceramic matrix, growth interface, and grown crystal are investigated. The results indicate that the dopant ions diffuse along with the grain boundary migration during the SSCG process while the segregation coefficient at the growth interface is higher than that of the grain boundary. A homogeneous grown crystal without segregation generates in a 6 at.% doping sample. When the doping concentration exceeds the solubility limit of the crystal lattice, surface morphology defects emerge as numerous protuberances in an 8 at.% doping sample. The SSCG technique has bright application prospects in heavily doped YAG crystal, especially for active ion diffusion limitation during the fabrication of planar waveguides.

materials science, multidisciplinary,optics
A Novel Method For Melt Flow Control And Inclusion Suppression In Optical Crystal Growth

Haisheng Fang,Lili Zheng,Hui Zhang,Yong Hong,Qun Deng

DOI: https://doi.org/10.1115/IMECE2007-41581

2008-01-01

Abstract:Optical and laser crystals grown by Czochralski technique from a solute-rich melt usually suffer defects of melt inclusion or bubble core, which severely affects optical, thermal and mechanical properties of the material. The main purpose of this paper is to study the inclusion mechanisms and to minimize such defects. Two types of mechanisms possibly responsible for inclusion defects are presented. In the current investigation, Czochralski grown optical single crystals are examined to recognize the effects of crystal rotation and natural convection on the melt flow pattern and solidification interface shape. It is established that increasing the rotation rate of crystal or reducing natural convection in the melt will cause the solid-liquid interface change from the convex shape to concave and high concentration of the species may be pushed away from the solidification interface. Simulations were performed to establish the relationships between Gr/Re-2 and growth interface shape change, and between Gr/Re-2 and stagnant point location were established. A disk submerged into the melt was used to reduce natural convection by reducing the melt height. The idea was similar to the submerged baffle or submerged heater used in Bridgeman crystal growth. The effect of submerged baffle on enhancement of crystal rotation effect was demonstrated. Simulation results showed that the melt flow near the solidification interface depended strongly on the baffle location, which was not surprised. The idea of submerged heater was also examined in Czochralski growth. Different from a constant temperature close to the melting temperature used in Bridgman growth, the submerged heater temperature should be selected on a higher temperature between the melting temperature and crucible temperature. The value depended strongly on the ratio between crystal and crucible diameters. It was proved that a constant temperature was not the best choice in Czochralski growth. In fact, an optimized temperature profile could be found in numerical simulations for melt flow control and inclusion suppression.
Interface Diagnostics: In-situ Prediction of Constitutional Supercooling and Backmelting by Growth Interface Electromotive Force

Wenjia Wang,Yunzhong Zhu,Biao Wang

DOI: https://doi.org/10.1016/j.matdes.2023.112070

2023-06-17

Abstract:onstitutional supercooling and backmelting are common interface instability phenomena that occur during crystal growth and induce serious component inhomogeneity and defect proliferation; these flaws impede further crystalline devices. However, the interpretation and prevention of the above instabilities are extremely difficult because of the elusive melt convection behavior and extreme crystal growth environments. Herein, we use the growth velocity-related growth interface electromotive force (GEMF) to visualize the interface instability and trace the crystallization kinetics in situ , which can even predict the intrinsic unstable growth induced by components segregation (constitutional supercooling) and melt convection (backmelting). This factor further determines the real-time upper and lower limits of the critical growth velocity, squeezing a unique stable growth region. The predicted stable region complies well with the macro-tomography of the as-grown boules. Besides, 2D and 3D micro-mappings indicate ion segregation saturation due to the onset of constitutional supercooling. On this basis, a quantitative criterion for understanding and preventing critical interface instability is proposed. This GEMF-based method can help us understand ions migration and solidification under critical conditions, and further, be used to optimize the growth parameters of bulk single crystals and alloys, or manipulate the instability phenomena to fabricate natural unique microstructures.

materials science, multidisciplinary
A method to increase the homogeneous section of monocrystals

Li Qingchun,Xu Daming

DOI: https://doi.org/10.1016/0022-0248(87)90336-8

IF: 1.8

1987-01-01

Journal of Crystal Growth

Abstract:Increasing the growth rate with time can shorten the initial transient length along a crystal solidified in a Bridgman furnace. Likewise, decreasing the rate can decrease the length of the final transient region. Design of an optimum rate program for practical monocrystal production in order to obtain the most economical processing is discussed.
Single Crystal Growth Tricks and Treats

Tanya Berry,Nicholas Ng,Tyrel M. McQueen

DOI: https://doi.org/10.48550/arXiv.2209.09370

2022-09-20

Abstract:Single crystal growth is a widely explored method of synthesizing materials in the solid state. The last few decades have seen significant improvements in the techniques used to synthesize single crystals, but there has been comparatively little discussion on ways to disseminate this knowledge. We aim to change that. Here we describe the principles of known single crystal growth techniques as well as lesser-known variations that have assisted in the optimization of defect control in known materials. We offer a perspective on how to think about these synthesis methods in a grand scheme. We consider the temperature interdependence with the reaction time as well as ways to carry out synthesis to scale up and address some outstanding synthesis challenges. We hope our descriptions will aid in technological advancements as well as further developments to gain even better control over synthesis.

Materials Science,Strongly Correlated Electrons

Method to Restains the Emergence of Foreign Crystals by Doped TGS Crystals

Optimizing Protein Crystal Growth Through Dynamic Seeding

Study on Growth and Property of Heavy Rare Earth Dy3+ Doped TGS Crystals

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Growth and Properties of Manganese and Lithium Doped TGS Crystals

Study of modified tgs crystals

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Segregation During Crystal Growth from Melt and Absorption Cross Section Determination by Optical Absorption Method

Crystal Morphology Prediction Models and Regulating Methods

Accelerating single-crystal growth by stimulated and self-guided channeling

Growing a single suspended perfect protein crystal in a fully noncontact manner

Restraint of Nucleation of SiC Polycrystals Surrounding the Seed During SiC Single Crystal Growth

Controlling Nucleation During Unseeded THM Growth of CdZnTe Crystal

INFLUENCE FACTORS ON METASTABLE ZONE IN DKDP CRYSTAL GROWTH

Growth and Characteristics of Near-Stoichiometric Zn:LiNbO3 Crystals Grown by TSSG Method

Crystal growth in confinement

A novel approach and segregation behavior of heavily doped Nd:YAG/YAG composite structure by solid-state crystal growth

A Novel Method For Melt Flow Control And Inclusion Suppression In Optical Crystal Growth

Interface Diagnostics: In-situ Prediction of Constitutional Supercooling and Backmelting by Growth Interface Electromotive Force

A method to increase the homogeneous section of monocrystals

Single Crystal Growth Tricks and Treats