High Performance Vanadyl Phthalocyanine Thin-Film Transistors Based on Fluorobenzene End-Capped Quaterthiophene As the Inducing Layer

Feng Pan,Hongkun Tian,Xianrui Qian,Lizhen Huang,Yanhou Geng,Donghang Yan
DOI: https://doi.org/10.1016/j.orgel.2011.05.003
IF: 3.868
2011-01-01
Organic Electronics
Abstract:A high performance VOPc thin-film transistor based on a fluorobenzene end-capped quaterthiophene as the inducing layer is fabricated by weak epitaxy growth method. The quality of epitaxial VOPc films is significantly improved. A commensurate epitaxial relationship is formed between the inducing layer and the VOPc films, leading to highly ordered VOPc films with large grains, which enhances the in-plane carrier transport. The field-effect mobility reaches up to 2.6cm2V−1s−1, the threshold voltage is lower than −5V, and the on–off current ratio is higher than 106. The device performance has no significant degradation in ambient condition for 100days. The high-performance and the air-stable VOPc OTFTs promote the practical applications for large-area and flexible display.
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