High performance organic field effect transistors based on two-dimensional Vat orange 3 crystals

Ning Yan,Zhiren Xiong,Chengbing Qin,Xiaoxi Li
DOI: https://doi.org/10.1088/0256-307x/41/2/028101
2024-01-13
Chinese Physics Letters
Abstract:Exploring and researching low-cost, environmentally friendly, and sustainable organic semiconductor materials are of immense significance in various fields, including electronics, optoelectronics, and energy conversion. Unfortunately, these semiconductors almost have poor charge transport properties which range from ~ 10 -4 cm 2 V -1 s -1 to ~ 10 -2 cm 2 V -1 s -1 . Vat orange 3, as one of these organic semiconductors, has great potential due to its highly conjugated structure. In this work, high-quality multilayered Vat Orange 3 crystals with two-dimensional growth on h-BN surfaces with thickness of 10 ~ 100 nm were obtained by physical vapor transport (PVT). Raman's results confirmed the stability of the chemical structure of Vat orange 3 during growth. Furthermore, by leveraging the structural advantages of two-dimensional materials, an organic field effect transistor (OFET) with 2D vdW vertical heterostructure was further realized with h-BN encapsulation and multilayered graphene contact electrodes resulting in an excellent transistor performance with On/Off radio of 10 4 and high field-effect mobility of 0.14 cm 2 v -1 s -1 . Our results show great potential of Vat orange 3 with two-dimensional structures in future nano-electronic applications. Furthermore, we showcased an approach that integrates organic semiconductors with two-dimensional materials, aiming to offer new insights into the study of organic semiconductors.
physics, multidisciplinary
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