A Quasi-Symmetric Coupled Quantum Well and Its Electric-Optical Properties

ZX Xu,XQ Jiang,MH Wang

DOI: https://doi.org/10.1117/12.636131

2005-01-01

Abstract:From the theoretical analysis for symmetric coupled quantum well, a novel coupled quantum well structure with low driving electric-field, low absorption loss and large field-induced refractive index change at 1.55 μm is put forward.

What problem does this paper attempt to address?

A Novel Coupled Quantum Well Structure with Large Field-Induced Refractive Index Change and Low Absorption Loss at 1.55 ?M

Zuyan Xu,Qiang Zhou,Xiaoqing Jiang,Xihua Li,Jianyi Yang,Minghua Wang

IF: 2.56

2005-01-01

Chinese Optics Letters

Abstract:A novel coupled quantum well structure --- quasi-symmetric coupled quantum well (QSCQW) is proposed. In the case of low applied electric field (F = 25 kV/cm) and low absorption loss (? ~ 100 cm^(-1)), a large field-induced refractive index change (for TE mode, ?n = 0.0106; for TM mode, ?n = 0.0115) is obtained in QSCQW structure at operating wavelength ? = 1550 nm. The value is larger by over one to two order of magnitude compared to that in a rectangular quantum well (RQW) and about 50% larger than that of five-step asymmetric coupled quantum well (FACQW) structure under the above work conditions.
Quantum-confined Stark Effect and Its Application in Optical Switches

徐枝新,王明华,江晓清,周强,杨爱龄

DOI: https://doi.org/10.3969/j.issn.1671-8798.2004.04.004

2004-01-01

Abstract:This paper introduces the principal content of quantum-confined Stark effect(QCSE),gives fast 2×2 Mach-Zehnder optical space switches based QCSE.By analysing the performance of the switches, it also points out the shortcoming of optical switches by using rectangular quantum well structures, and finally provides a solution with FACQW'S.
Coupled cavity-waveguide based on topological corner state and edge state

Aoqian Shi,Bei Yan,Rui Ge,Jianlan Xie,Yuchen Peng,Hang Li,Wei E. Sha,Jianjun Liu

DOI: https://doi.org/10.1364/OL.418570

2021-01-01

Abstract:The topological corner state (TCS) and topological edge state (TES) have created new approaches to manipulate the propagation of light. The construction of a topological coupled cavity-waveguide (TCCW) based on the TCS and TES is worth looking forward to, due to its research prospects in realizing high-performance micro-nano integrated photonic devices. In this Letter, the TCCW is proposed in two-dimensional (2D) photonic crystal (PC), which possesses strong optical localization, high quality factor, and excellent robustness compared with the conventional coupled cavity-waveguide (CCCW). This work will pave the way toward designing high-performance logic gates, lasers, filters, and other micro-nano integrated photonics devices and expanding their applications. (C) 2021 Optical Society of America
Optical-phonon Modes and Electron-Optical-phonon Interaction in a Coupled Quantum Well

JJ Shi,SH Pan

DOI: https://doi.org/10.1063/1.363342

IF: 2.877

1996-01-01

Journal of Applied Physics

Abstract:Within the framework of the dielectric continuum model, optical phonon modes and their interaction and scattering with electrons in general coupled quantum wells (GCQWs) are studied. The dispersion relation of interface phonons and the electron-interface-phonon coupling strengths as functions of coordinate z and wave-number k are derived and illustrated. We find that the forbidden-frequency behavior of asymmetric heterostructures exists in GCQWs, which may cause an obvious polarization and interaction with electrons. The scattering rates as functions of quantum well parameters are calculated and numerical examples are given graphically. It is shown that the behaviors of intersubband scattering rates are much more complicated than those of intrasubband scattering ones. The results are useful for subsequent theoretical modeling of optical or transport experiments.
Ultrashallow Heavily Constrained Quantum Wells: the Cradle for Fully Electrically Controlled and Microwave Coupled Quantum Bits

Yiwen Zhang,Zonghu Li,Yuchen Zhou,Yuhui Ren,Jiahan Ke,Jiale Su,Yanpeng Song,Jun Deng,Yang Liu,Runze Zhang,Haiou Li,Baochuan Wang,Zhenhua Wu,Jun Luo,Zhenzhen Kong,Gang Cao,Guoping Guo,Chao Zhao,Guilei Wang

DOI: https://doi.org/10.1103/physrevmaterials.8.046203

IF: 3.98

2024-01-01

Physical Review Materials

Abstract:Ge/SiGe heterostructure quantum well structures based on Ge two-dimensional hole gas have become one of the most promising research directions for preparing spin quantum bits due to their low disorder and high mobility. In this study, high-quality virtual substrates were epitaxially grown on 8-in silicon substrates using reduced pressure chemical vapor deposition. The surface roughness of the samples was optimized by adjusting key parameters such as the thickness of the reverse gradient buffer layer and Si1-xGex buffer layer. Based on the strain modulation of dislocation dynamics, high-quality strained quantum wells with a density of stress accumulation points (DSAP) of 0.301/mu m2 and surface RMS roughness less than 3 nm were achieved. Ultimately, an ultrashallow heavily constrained and undoped quantum well with a well depth of 15 nm, in-plane compressive strain of sil = -1.19%, and a mobility of 3.382 x 105 cm2/Vs was obtained. A novel characterization method for quantum wells was proposed based on the defined DSAP. The ultrashallow quantum well depth and higher compressive strain enable the quantum well to maintain a high effective g factor (up to 8.3), becoming the cradle for fully electrically controlled and microwave coupled quantum bits.
Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

p j poole,n sylvain charbonneau,m dion,yan feng,jian jun he,emil s koteles,i v mitchell,r d goldberg

DOI: https://doi.org/10.1117/12.228872

1995-01-01

Abstract:A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatially selective tuning of the QW bandgap in a laser structure. High energy (MeV) ion implantation is used to create a large number of vacancies and interstitials in the device. During high temperature processing, these defects simultaneously enhance the intermixing of the QW and the barrier materials, producing a blue shift of the QW bandgap, and are annealed out. Increases in bandgap energy (measured using low temperature photoluminescence spectroscopy) of greater than 60 meV can be achieved. Absorption spectroscopy in the waveguide direction is also used to quantify any excess loss in the structure. Using a simple masking scheme to spatially modify the defect concentration, different regions of a wafer can be blue shifted by different amounts. This allows the integration of many different devices such as lasers, detectors, modulators, waveguides etc. on a single wafer using only a single, post-growth processing step. The performance of both passive (waveguide) and active (laser) devices produced using this technique is described, as well as the practicality of this technique in the production of photonic integrated circuits.
Photonic Integrated Circuits and Components Using Quantum Well Intermixing

JJ He,ES Koteles,PJ Poole,Y Feng,M Davis,S Charbonneau,RD Goldberg,LV Mitchell

DOI: https://doi.org/10.1117/12.253161

1996-01-01

Abstract:The monolithic integration of optical components with different functionalities on a single semiconductor wafer requires spatially selective control of bandgap energies. We have developed a simple, post-growth technique based on quantum well intermixing using ion implantation and rapid thermal annealing, which allows multiple selective area bandgap tailoring. Waveguide absorption spectra demonstrate that the bandgap energy can be shifted as much as 90 nm without any excess loss. By depositing a SiO2 layer of different thicknesses in different regions as the implantation mask, quantum wells in different sections of a wafer can be intermixed to different degrees in a single implantation and annealing process. It has also been shown that the heavy-hole and light hole states in the quantum wells can become degenerate at a certain degree of intermixing, which allows the fabrication of polarization insensitive optical amplifiers and electro-absorptive switches. The performance of both active (laser, amplifier, modulator) and passive (waveguide) components produced using this technique will be presented.
Photonic-integrated circuits and components using quantum well intermixing

jian jun he,emil s koteles,p j poole,yan feng,michael j davis,n sylvain charbonneau,r d goldberg,i v mitchell

DOI: https://doi.org/10.1117/12.253161

1996-01-01

Abstract:The monolithic integration of optical components with different functionalities on a single semiconductor wafer requires spatially selective control of bandgap energies. We have developed a simple, post-growth technique based on quantum well intermixing using ion implantation and rapid thermal annealing, which allows multiple selective area bandgap tailoring. Waveguide absorption spectra demonstrate that the bandgap energy can be shifted as much as 90 nm without any excess loss. By depositing a SiO2 layer of different thicknesses in different regions as the implantation mask, quantum wells in different sections of a wafer can be intermixed to different degrees in a single implantation and annealing process. It has also been shown that the heavy-hole and light hole states in the quantum wells can become degenerate at a certain degree of intermixing, which allows the fabrication of polarization insensitive optical amplifiers and electro-absorptive switches. The performance of both active (laser, amplifier, modulator) and passive (waveguide) components produced using this technique will be presented.
Ultra-wide frequency tuning range for optical properties in coaxial quantum well driven by intense laser field

Keyin Li,Siqi Zhu,Shibo Dai,Qi Guo Yang,Hao Yin,Zhen Li,Zhenqiang Chen

DOI: https://doi.org/10.1016/j.jlumin.2021.118364

IF: 3.6

2021-11-01

Journal of Luminescence

Abstract:A new approach for controlling intersubband transitions and optical properties of coaxial cylindrical quantum well is proposed. Considering the correct dressing effect for the confinement potential, the new ultra-wide tuning mechanism is based on the variation of quasibound states with the intensity of long-wavelength laser field. By means of the finite difference method, the results provide a new explanation for the anticrossing of energy levels and exhibit great potential for ultra-wide frequency tunability (ranging from terahertz to the mid-infrared region) of the optical absorption coefficient and refractive index changes by modulating the laser parameters and barrier thickness.

optics
Photonic quantum-well structures containing negative-index materials

Chun Xu,Xiaochuang Xu,Dezhuan Han,Xiaohan Liu,Chung Ping Liu,Chih Jung Wu

DOI: https://doi.org/10.1016/j.optcom.2007.07.041

IF: 2.4

2007-01-01

Optics Communications

Abstract:The properties of photonic quantum-well structures containing negative-index materials are studied theoretically, showing features remarkably better than conventional photonic quantum-well structures. Owning to the zero-n¯ gap of one-dimensional photonic crystals containing negative-index materials, the photonic quantum-well structures can be proposed as a multiple channeled filter which is very weak dependent on incident angle and polarization, and insensitive to the thickness disorder of the barrier photonic crystals.
The Optical Waveguide Design Of Quantum Well Electroabsorption Optical Modulator

Jianying Zhou,Xiaoqing Jiang,Jianyi Yang,Minghua Wang

DOI: https://doi.org/10.1117/12.636104

2005-01-01

Abstract:The optical waveguide design of quantum well EA traveling-wave modulator is investigated by the evaluation criteria, which contain material parameters, couple loss, microwave properties. The result shows that the material design is very important for good performance, and the thickness of core layer is larger than absorption layer is better and the thickness of active layer should be optimized.
Optical Study on the Coupled GaAsSb/GaAs Double Quantum Wells

DS Jiang,XG Liang,K Chang,LF Bian,BQ Sun,JB Wang,S Johnson,Y Zhang

DOI: https://doi.org/10.1109/commad.2002.1237240

2002-01-01

Abstract:The structural and optical properties of GaAsSb/GaAs-based quantum wells (QWs) are investigated. The interface quality of GaAsSb/GaAs/GaAsP coupled double (CD) QW structures is improved due to the strain compensation of epitaxial layers. The CD QWs possess a W-shape of energy band structure, and the optical properties display the features characteristic of a type-I QW when the GaAsSb layer thickness is thin enough.
Coupling of One-Dimensionally Confined Optical Modes in Porous Silicon: Spectral Observation and Photonic-Quantum-well Description

SH Xu,XM Ding,ZH Xiong,Y Liu,ZJ Wang,J Zi,XY Hou

DOI: https://doi.org/10.1016/j.photonics.2005.11.002

2006-01-01

Abstract:Single and double photonic-quantum-wells (PQWs) have been fabricated, using refractive-index-modulated porous silicon multilayer structures. The one-dimensionally confined optical modes observed are consistent with those calculated using the transfer matrix method. While single PQWs exhibit atom-like discrete spectral features, molecule-like energy level splitting is accessible by combining two single PQWs into a double PQW structure. Similar to an electron in a double-quantum-well structure, the energy separation between the split ‘anti-bonding’ and ‘bonding’ photonic states can be ‘tuned’ by changing the strength of inter-well coupling.
Analysis of Photon-Induced Refractive Index Change Based on GaAs/AlGaAs Quantum Wells Materials

LI Long-zhi,YANG Jian-yi,WANG Ming-hua,JIANG Xiao-qing

DOI: https://doi.org/10.3969/j.issn.1005-5630.2005.05.031

2005-01-01

Abstract:The primary analysis of photon-induced refractive index change based on GaAs/AlGaAs quantum wells materials is presented in this paper.The effect of photon-excited carriers were treated self-consistently.For transmitting light at 1.55μm(1.3μm),Δn can reach-10~(-2) at 1μm depth along z axes when the power density of controlling light(805nm) is 6×10~3W/cm~2(8×10~3W/cm~2).Compared with the model based on GaAs bulk materials,the model based on quantum wells materials can reduce the controlling power density by about 20% to reach the same photon-induced refractive index change,and also decrease the controlling power consumption for all-optical switches and all-optical modulators.
Polarization-insensitive Quantum Well Optoelectronic Devices Using Quantum Well Shape Modification

ES Koteles,JJ He,S Charbonneau,PJ Poole,GC Aers,Y Feng,RD Goldberg,IV Mitchell

DOI: https://doi.org/10.1117/12.265364

1997-01-01

Abstract:Polarization insensitive 1.5 micrometer QW optical amplifiers, modulators, and detectors were fabricated using a novel, simple, post-growth, integratable technique. The process utilizes ion-implantation-induced, spatially selective, quantum well (QW) shape modification. A simple model shows that if the interdiffusion rate of the anions is larger than that of the cations, the blue shift in the ground state heavy hole transition energy after implantation and annealing is greater than the light hole state blue shift, merging the two bands and thus eliminating the difference between the TE (transverse electric) and TM (transverse magnetic) waveguide propagation modes. Current- voltage measurements indicate that junction characteristics are well maintained after processing. This simple technique for fabricating discrete polarization insensitive optoelectronic devices is readily extended to the monolithic integration of such devices along with other passive and active optoelectronic devices and provides a pathway to practical photonic integrated circuits.
Polariton propagation in weak confinement quantum wells

D. Schiumarini,N. Tomassini,L. Pilozzi,A. D'Andrea

DOI: https://doi.org/10.1103/PhysRevB.63.045202

2010-07-19

Abstract:Exciton-polariton propagation in a quantum well, under centre-of-mass quantization, is computed by a variational self-consistent microscopic theory. The Wannier exciton envelope functions basis set is given by the simple analytical model of ref. [1], based on pure states of the centre-of-mass wave vector, free from fitting parameters and "ad hoc" (the so called additional boundary conditions-ABCs) assumptions. In the present paper, the former analytical model is implemented in order to reproduce the centre-of-mass quantization in a large range of quantum well thicknesses (5a_B < L < inf.). The role of the dynamical transition layer at the well/barrier interfaces is discussed at variance of the classical Pekar's dead-layer and ABCs. The Wannier exciton eigenstates are computed, and compared with various theoretical models with different degrees of accuracy. Exciton-polariton transmission spectra in large quantum wells (L>> a_B) are computed and compared with experimental results of Schneider et al.\cite{Schneider} in high quality GaAs samples. The sound agreement between theory and experiment allows to unambiguously assign the exciton-polariton dips of the transmission spectrum to the pure states of the Wannier exciton center-of-mass quantization.

Mesoscale and Nanoscale Physics
A Double-Quantum-Well in A Driving Laser Field

Xian-Geng Zhao,S. J. Xu,W. C. Cheng

DOI: https://doi.org/10.1007/bf01320851

1995-01-01

Abstract:The dynamic effect of electrons in a double quantum well under the influence of a monochromatic driving laser field is investigated. Closed-form solutions for the quasienergy and Floquet states are obtained with the help of SU(2) symmetry. For the case of weak interlevel coupling, explicit expressions of the quasienergy are presented by the use of perturbation theory, from which it is found that as long as the photon energy is not close to the tunnel splitting, the electron will be confined in an initially occupied eigenstate of the undriven system during the whole evolution process. Otherwise, it will transit between the lowest two levels in an oscillatory behavior.
Compensation mechanism of carriers within weakly coupled quantum wells

Yahui Zhang,Yunhao Zhao,Chenyuan Cai,Jinming Shang,Yuyang Wu,Yu Zhang,Yingqiang Xu,Chongyun Liang,Zhichuan Niu,Yi Shi,Renchao Che

DOI: https://doi.org/10.1063/5.0045844

IF: 4

2021-03-22

Applied Physics Letters

Abstract:The study of coupling effect (CE) within low-dimensional quantum structures is essential not only for the comprehensive understanding of quantum transport but also for improving the performances of photoelectric devices. Recently, electronically weakly coupled quantum well (QW) structures pave the way for low threshold lasing, but the related coupling mechanism has not been clarified yet. Here, we report the direct experimental evidence of compensation mechanism in the carrier migration process within weakly coupled double QWs (DQWs). It is proved that the leakage rate of charges could be modulated within the two InGaSb QWs of the DQW structure owing to CE. Compared to the single QW configuration, the dissipation of carriers from the QWs within the DQW structure is alleviated under an external field. Further, radiative recombination efficiency for the DQW structure could be enhanced to obtain a lower threshold power. Thus, it may be deduced that the carrier compensation effect between QWs profoundly impacts the multiple-QW laser performance.

physics, applied
Influence of Applied Electric Field on the Absorption Coefficient and Subband Distances in Asymmetrical AlN/GaN Coupled Double Quantum Wells

Cen Long-Bin,Shen Bo,Qin Zhi-Xin,Zhang Guo-Yi

DOI: https://doi.org/10.1088/1674-1056/18/9/048

2009-01-01

Abstract:The influence of applied electric fields on the absorption coefficient and subband distances in asymmetrical AlN/GaN coupled double quantum wells (CDQWs) has been investigated by solving Schrodinger and Poisson equations self-consistently. It is found that the absorption coefficient of the intersubband transition (ISBT) between the ground state and the third excited state (1odd − 2even) can be equal to zero when the electric fields are applied in asymmetrical AlN/GaN CDQWs, which is related to applied electric fields induced symmetry recovery of these states. Meanwhile, the energy distances between 1odd − 2even and 1even − 2even subbands have different relationships from each other with the increase of applied electric fields due to the different polarization-induced potential drops between the left and the right wells. The results indicate that an electrical-optical modulator operated within the opto-communication wavelength range can be realized in spite of the strong polarization-induced electric fields in asymmetrical AlN/GaN CDQWs.
Electro-Optic Effect in A Semi-Parabolic Quantum Well with an Applied Electric Field

L Zhang,HJ Xie

DOI: https://doi.org/10.1142/s0217984903005366

2003-01-01

Modern Physics Letters B

Abstract:By using the compact density matrix approach, the electro-optic effect (EOE) in a semi-parabolic quantum well (QW) with an applied electric field has been theoretically investigated. Via a variant of displacement harmonic oscillation, the exact electronic states in the semi-parabolic QW with an applied electric field are obtained. Numerical results on typical GaAs material reveal that the electro-optic effect nearly linearly increases with the increasing of magnitude of the electric field, but it monotonously decreases with the increasing of confining potential frequency of the semi-parabolic QW. The EOE in the model investigated is 10(2) times larger than that in the symmetric parabolic QW under the same electric field and the same frequency of parabolic confining potential, which is due to the self-asymmetry of the system and the electric field effect.

A Quasi-Symmetric Coupled Quantum Well and Its Electric-Optical Properties

A Novel Coupled Quantum Well Structure with Large Field-Induced Refractive Index Change and Low Absorption Loss at 1.55 ?M

Quantum-confined Stark Effect and Its Application in Optical Switches

Coupled cavity-waveguide based on topological corner state and edge state

Optical-phonon Modes and Electron-Optical-phonon Interaction in a Coupled Quantum Well

Ultrashallow Heavily Constrained Quantum Wells: the Cradle for Fully Electrically Controlled and Microwave Coupled Quantum Bits

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Photonic-integrated circuits and components using quantum well intermixing

Ultra-wide frequency tuning range for optical properties in coaxial quantum well driven by intense laser field

Photonic quantum-well structures containing negative-index materials

The Optical Waveguide Design Of Quantum Well Electroabsorption Optical Modulator

Optical Study on the Coupled GaAsSb/GaAs Double Quantum Wells

Coupling of One-Dimensionally Confined Optical Modes in Porous Silicon: Spectral Observation and Photonic-Quantum-well Description

Analysis of Photon-Induced Refractive Index Change Based on GaAs/AlGaAs Quantum Wells Materials

Polarization-insensitive Quantum Well Optoelectronic Devices Using Quantum Well Shape Modification

Polariton propagation in weak confinement quantum wells

A Double-Quantum-Well in A Driving Laser Field

Compensation mechanism of carriers within weakly coupled quantum wells

Influence of Applied Electric Field on the Absorption Coefficient and Subband Distances in Asymmetrical AlN/GaN Coupled Double Quantum Wells

Electro-Optic Effect in A Semi-Parabolic Quantum Well with an Applied Electric Field