Abstract:In recent years, GaSb-on-Si direct heteroepitaxy has been highly desirable to extend the operating wavelength range into mid-infrared and high-mobility applications, such as free-space communications, gas sensing, and hyperspectral imaging. High-quality GaSb films on Si remain challenging due to the high density of defects generated during the growth. For this purpose, epitaxial GaSb films were grown by molecular beam epitaxy on on-axis Si(001). Due to the large lattice mismatch (12.2%) between GaSb and Si, here, we proposed a radical design and growth strategy with the primary objective of achieving the annihilation of antiphase boundaries (APBs) and the reduction of threading dislocation density (TDD). Benefitting from a V-grooved Si hollow structure, we demonstrated the growth of emerging-APB-free GaSb film on Si(001) with low mosaicity. Moreover, by introducing InGaSb/GaSb dislocation filtering layers, the atomically flat surface root mean square roughness is improved to 0.34 (on Si) and 0.14 nm (on GaAs/Si). Moreover, the corresponding TDD can be reduced to 3.5 × 10 7 and 2 × 10 7 cm −2 , respectively, one order of magnitude lower than the minimum value found in the literature. These reported results are a powerful lever to improve the overall quality of epitaxial Si-based antimonide, which is of high interest for various devices and critical applications, such as laser diodes, photo-detectors, and solar cells.

Ga1−xMnxSb grown on GaSb substrate by liquid phase epitaxy

Ga1−xMnxSb grown on GaSb with mass-analyzed low-energy dual ion beam deposition

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Contradictory increase of critical layer thickness in InxGa1−xSb/GaAs heterostructures grown by MBE

quantum well structures grown by molecular beam epitaxy

Homoepitaxial and Characterization of GaSb Thin Films by Molecular Beam Epitaxy

Optical Properties of Pb1-Xmnxse Thin Films

LPE Growth and Optical Characteristics of GaAs1−xSbx Epilayer

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE

Molecular beam epitaxy growth and optical properties of high bismuth content GaSb 1-x Bi x thin films

MBE growth and luminescence property of GaSb thin film based on GaAs

Epitaxial Growth of High Quality InSb1-xNx by MOCVD

Structural Study of Mnxsi1-X Magnetic Semiconductor Thin Films

Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

Suspended Ga2se3 Film and Epitaxial Bi2se3(221) on Gasb(001) by Molecular-Beam Epitaxy

Electronic properties of metamorphic GaSbBi films on GaAs

Growth and characterization of quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb

Effect of Buffer Layer Growth Rate on Two-Dimension Growth of GaSb Epitaxial Layer

Electronic, Magnetic, and Optical Properties of Mn-doped GaSb: a First-Principles Study

Sb surface terminated MnSb devices in the niccolite phase