Abstract:Enhancement-mode (E-mode) buried <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-channel GaN metal-oxide-semiconductor field-effect-transistors (<inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN-MOSFET’s) with threshold voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula>) of −1.7 V, maximum ON-state current (<inline-formula> <tex-math notation="LaTeX">${I}_{\text {ON}}$ </tex-math></inline-formula>) of 6.1 mA/mm and <inline-formula> <tex-math notation="LaTeX">${I}_{\text {ON}}/{I}_{\text {OFF}}$ </tex-math></inline-formula> ratio of 10<sup>7</sup> are demonstrated on a standard <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN/AlGaN/GaN-on-Si power HEMT substrate. An oxygen plasma treatment (OPT) was deployed to the gated <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN region where a relatively thick (i.e. 31 nm) GaN is retained without aggressive gate recess. The OPT converts the top portion of the GaN layer to be free of holes so that only the bottom portion remains <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-type while being spatially separated from the etched GaN surface and gate-oxide/GaN interface. As a result, E-mode operation is enabled while a high-quality <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-channel is retained. Multi-energy fluorine ion implantation was implemented for planar isolation of GaN <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-channel FETs with mesa edges and sidewalls eliminated. Consequently, high <inline-formula> <tex-math notation="LaTeX">${I}_{\text {ON}}/{I}_{\text {OFF}}$ </tex-math></inline-formula> ratio is obtained.

High Breakdown Voltage Enhancement-mode AlGaN/GaN HFET Device Based on Energy Band Modulation Model

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate

Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage

Enhancement-mode GaN HEMT using a combination structure of recessed-gate and p-GaN gate structure

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Optimization AlGaN/GaN HEMT with Field Plate Structures

Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

Performance improvement of enhancement-mode GaN-based HEMT power devices by employing vertical gate structure and composite interlayers

High Breakdown AlGaN/GaN MOSHEMT with Thermal Oxidized Ni/Ti As Gate Insulator

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

High <inline-formula> <tex-math notation="LaTeX">${I}_{\text{ON}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${I}_{\text{ON}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${I}_{\text{OFF}}$ </tex-math></inline-formula> Ratio Enhancement

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Design and Simulation of High-Breakdown-voltage GaN-based Vertical Field-Effect Transistor with Interfacial Charge Engineering

Enhancement-Mode Gan Double-Channel Mos-Hemt with Low On-Resistance and Robust Gate Recess

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

Interface Charge Engineering in Down-Scaled AlGaN (<6 Nm)/gan Heterostructure for Fabrication of GaN-based Power HEMTs and MIS-HEMTs

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

An Algan/Gan Hemt with Enhanced Breakdown and A Near-Zero Breakdown Voltage Temperature Coefficient

GaN-based E-mode p-FETs with polarization-doped p-Type graded AlGaN channels

Threshold Voltage Modulation Engineering Using P‐type CuO and NiO for the AlGaN/GaN Enhancement‐Mode Fin‐MOS‐HEMTs on the Si Substrates