Abstract:A phase separation lithography (PSL) based on polymer blend provides an extremely simple, low-cost, and high-throughput way to fabricate wafer-scale disordered nanopatterns. This method was introduced to fabricate nanopatterned sapphire substrates (NPSSs) for GaN-based light-emitting diodes (LEDs). The PSL process only involved in spin-coating of polystyrene (PS)/polyethylene glycol (PEG) polymer blend on sapphire substrate and followed by a development with deionized water to remove PEG moiety. The PS nanoporous network was facilely obtained, and the structural parameters could be effectively tuned by controlling the PS/PEG weight ratio of the spin-coating solution. 2-in. wafer-scale NPSSs were conveniently achieved through the PS nanoporous network in combination with traditional nanofabrication methods, such as O2 reactive ion etching (RIE), e-beam evaporation deposition, liftoff, and chlorine-based RIE. In order to investigate the performance of such NPSSs, typical blue LEDs with emission wavelengths of ~450 nm were grown on the NPSS and a flat sapphire substrate (FSS) by metal–organic chemical vapor deposition, respectively. The integral photoluminescence (PL) intensity of the NPSS LED was enhanced by 32.3 % compared to that of the FSS-LED. The low relative standard deviation of 4.7 % for PL mappings of NPSS LED indicated the high uniformity of PL data across the whole 2-in. wafer. Extremely simple, low cost, and high throughput of the process and the ability to fabricate at the wafer scale make PSL a potential method for production of nanopatterned sapphire substrates.

Fabrication of Nano-Patterned Sapphire Substrates and Their Application to the Improvement of the Performance of GaN-based LEDs

Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

Fabrication of Wafer-Scale Nanopatterned Sapphire Substrate by Hybrid Nanoimprint Lithography

Design of patterned sapphire substrates for GaN-based light-emitting diodes

Fabrication of Wafer-Scale Nanopatterned Sapphire Substrate Through Phase Separation Lithography

Nanoimprinted patterned sapphire with silica array for efficient InGaN-based green mini-LEDs

Parameters optimization of nanopatterned sapphire substrates for enhancing light extraction efficiency of GaN-based LEDs

282-Nm Algan-Based Deep Ultraviolet Light-Emitting Diodes with Improved Performance on Nano-Patterned Sapphire Substrates

Application of patterned sapphire substrate for III-nitride light-emitting diodes.

Fabrication of Volcano-Shaped Nano-Patterned Sapphire Substrates Using Colloidal Self-Assembly and Wet Chemical Etching

Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films

Analyses of Light Extraction Efficiency in GaN‐based LEDs Grown on Patterned Sapphire Substrates

Enhanced performance of GaN-based LEDs via electroplating of a patterned copper layer on the backside

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

GaN LEDs on Si Substrate

Suppressing optical crosstalk for GaN/InGaN based flip-chip micro light-emitting diodes by using an air-cavity patterned sapphire substrate as a light filter

Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal

[Optical Characteristics of InGaN/GaN Light Emitting Diodes on Patterned Sapphire Substrate].

Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography