Optical Properties of GD A-Si:H/a-si1−xcx:h Superlattices

FQ ZHANG,XX XU,GS SUN,YF ZHANG,GG CHEN

DOI: https://doi.org/10.1016/0022-2313(88)90409-7

IF: 3.6

1988-01-01

Journal of Luminescence

Abstract:The blue shift of optical bandgap and PPC effect are observed in undoped a-Si:H/a-Si1−xCx:H superlattices. With IR technique, the interface properties have been studied.

What problem does this paper attempt to address?

The Enhancement Of The Photoconductivity Of A-Sisn(Cl-H) Alloys By Means Of Gd Technique

Wy Xu

DOI: https://doi.org/10.1016/0022-3093(85)90807-5

IF: 4.458

1985-01-01

Journal of Non-Crystalline Solids

Abstract:A narrow optical band gap of a-SiSn (Cl:H) alloy has been prepared by G D technique using SiH4 and SnCl4 gas mixtures. The optical band gap and the photoconductivity of the a-SiSn (Cl:H) alloy decreases steadily (band gap from 1.8--1.2ev) with increasing Sn content in the film, and the predominant conduction mechanism changes from n to p type. We have doped some quantity of phosphor for compensation into a-SiSn (Cl:H) alloys (Eopt1.45--1.5ev) using pH3, SiH4, SnCl4 gas mixtures. As the P concentration increases to a suitable quantity, the photoconductivity of the alloys enhance two or three order of magnitudes and the conduction mechanism changes from p to n type.
Optical Properties of A-Si/a-sin_x Superlattices

张春华,郭亨群,王国立,申继伟,徐骏,陈坤基

DOI: https://doi.org/10.3969/j.issn.1007-4252.2009.03.002

2009-01-01

Abstract:a-Si/a-SiN_x superlattices of different Si layer thickness were fabricated by RF magnetron sputtering technique.IR,EDS,XRD,absorption,photoluminescence(PL) techniques were used to study the composition,structure and the luminescent properties.The results indicated the absorption edge positions and PL peaks shift with different Si layer thickness.The quantum confinement effects(QCE) was obviously observed.After thermal annealing at 1000℃,the PL peak of the thicker sample was found to shift towards shorter wavelength due to the formed nc-Si particles in a-Si layers.
Study on solid-phase crystallization of B-doped a-Si:H film

Zhenrui Yu,Xinhua Geng,Yun Sun,Shiguo Liu,Zhonglin Sun,Wenyuan Xu

1994-01-01

Abstract:The effect of B atoms on the solid-phase crystallization of a-Si:H film after annealing was studied by using X-ray diffraction, Hall measurement, optical reflecting transmission measurement and conductivity measurement. It was found that the B atoms act as nuclei in the solid-phase crystallization process. The crystalline film has high conductivity and high Hall mobility. The optical band gap of crystalline film is larger than that of conventional a-SiC:H window layer. The p-type Poly-Si layer prepared by solid-phase crystallization method is a window material for solar cell.
Optical properties of delta-doped GaAs and GaAs/Al0.1Ga0.9As superlattices

WC Cheng,JB Xia,SJ Xu,HZ Zheng,KJ Luo,PH Zhang,XP Yang

1996-01-01

Abstract:Radiative transition in delta-doped GaAs superlattices with and without Al0.1Ga0.9As barriers is investigated by using photoluminescence at low temperatures. The experimental results show that the transition mechanism of delta-doped superlattices is very different from that of ordinary superlattices. Emission intensity of the transition from the electron first excited state to hole states is obviously stronger than that from the electron ground state to hole states due to larger overlap integral between wavefunctions of electrons in the first excited state and hole states. Based on the effective mass theory we have calculated the self-consistent potentials, optical transition matrix elements and photoluminescence spectra for two different samples. By using this model we can explain the main optical characteristics measured. Moreover, after taking into account the bandgap renormalization energy, good agreement between experiment and theory is obtained.
Optical Properties of Δ-Doped GaAs and GaAs/Al 0.1 Ga 0.9 As Superlattices

Cheng Wen-chao,Xia Jian-bai,Xu Shi-jie,Zheng Hou-zhi,Luo Ke-jian,Zhang Peng-hua,Yang Xiao-ping

DOI: https://doi.org/10.1088/1004-423x/5/6/008

1996-01-01

Abstract:Radiative transition in δ-doped GaAs superlattices with and without Al0.1 Ga0.9As barriers is investigated by using photoluminescence at low temperatures. The experimental results show that the transition mechanism of δ-doped superlattices is very different from that of ordinary superlattices. Emission intensity of the transition from the electron first excited state to hole states is obviously stronger than that from the electron ground state to hole states due to larger overlap integral between wavefunctions of electrons in the first excited state and hole states. Based on the effective mass theory we have calculated the self-consistent potentials, optical transition matrix elements and photoluminescence spectra for two different samples. By using this model we can explain the main optical characteristics measured. Moreover, after taking into account the bandgap renormalization energy, good agreement between experiment and theory is obtained.
Effect of atomic bonding configuration on optical properties of a-Si1−xCx:H thin film

Jiali Han,Xiang Li,Gang Xu,Zhaohui Ren,Ge Shen,Gaorong Han

DOI: https://doi.org/10.1016/j.jallcom.2013.01.078

IF: 6.2

2013-01-01

Journal of Alloys and Compounds

Abstract:a-Si1−xCx:H thin film with adjustable optical band gap and photoluminescence (PL) property has been strongly demanded for various optoelectronic applications. The control of atomic bonding within the film has been considered as a promising approach to address such challenge. In this study, a range of a-Si1−xCx:H thin films prepared using plasma enhanced chemical vapor deposition (PECVD) were annealed at different temperature. It was found that the content of Si–Hn group and C–Hn group decreased with the increased temperature from 200°C to 600°C, and consequently more Si–C bonds and sp3 hybridized C clusters were formed. Such atomic bonding configuration variation was found to induce enlarged optical band gap. In addition, the PL wavelength was effectively adjusted, and its efficiency was significantly enhanced. The underlying relationship between the atomic bonding characteristics and the optical properties of a-Si1−xCx:H was extensively discussed. This study has therefore been an important step forward to its further advanced applications.
Optical properties of Ge/Si quantum dot superlattices

Zheng Yang,Yi Shi,Jianlin Liu,Bo Yan,Rong Zhang,Youdou Zheng,Kanglong Wang

DOI: https://doi.org/10.1016/j.matlet.2004.08.016

IF: 3

2004-01-01

Materials Letters

Abstract:Self-assembled Ge/Si quantum dot (QD) superlattices (SLs) were grown by a solid-source molecular beam epitaxy (MBE) system with the Stranski-Kranstanov (SK) growth mode. Atomic force microscope (AFM) and transmission electron microscope (TEM) characterizations of the samples were presented. Photoluminescence (PL) and Raman scattering measurements were carried out. The temperature dependence of the PL intensity has been reported and fitted by the Arrhenius and Berthelot type function. Some valuable parameters were obtained through the fitted curves, one of which was closely related to the dimension and effective mass of electron of the QDs.
Photoluminescence Fatigue Effect in GD A-Si : H:O

MY DONG,XP WU,GR HAN,ZS DING

DOI: https://doi.org/10.1016/0022-2313(88)90155-x

IF: 3.6

1988-01-01

Journal of Luminescence

Abstract:Photoluminescence fatigue effect in GD a-Si :H:O films was observed at 77K. This effect was shown to be sensitive to deposition power. These results are interpreted in termsof non-radiative recombination associated with dangling bonds created by prolonged light irradiation. This interpretation is verified by ESR measurement of the films.
Direct Observation of Compositionally Homogeneousa-C: H Band-Gap-Modulated Superlattices

CA DAVIS,SRP SILVA,RE DUNINBORKOWSKI,GAJ AMARATUNGA,KM KNOWLES,WM STOBBS

DOI: https://doi.org/10.1103/physrevlett.75.4258

IF: 8.6

1995-01-01

Physical Review Letters

Abstract:It is shown that amorphous hydrogenated carbon (a-C:H) band-gap-modulated superlattices can be observed by transmission electron microscopy. The layering proves to be well defined and it is demonstrated that changes in the band gap from 1.5 to 2.8 eV cannot be associated with ordered graphitic regions, in that crystalline regions larger than 0.5 nm are not observed. Differences in the amount of pi bonding are found to lead to changes in the average atomic scattering factor. It is suggested that the changes in pi bonding are associated with changes in local ordering that control the band gap.
Optical Properties of Amorphous Si/Sio2 Superlattice

NN Liu,JM Sun,SH Pan,ZH Chen,RP Wang,WS Shi,XG Wang

DOI: https://doi.org/10.1006/spmi.2000.0898

IF: 3.22

2000-01-01

Superlattices and Microstructures

Abstract:Amorphous Si/SiO2(a-Si/SiO2) superlattices have been fabricated by the magnetron sputtering technique. The superlattice with an Si layer thickness of 1.8 nm has been characterized by transmission electron microscopy (TEM). The result indicates that most of the regions in the Si layer consist of amorphous phase, while regular structure appears in some local regions. This is in agreement with the Raman scattering spectroscopy. The optical absorption spectrum and photoluminescence (PL) spectrum have been measured. Moreover, the third-order optical nonlinearity χ(3)of this superlattice has been measured. To our knowledge, this is the first investigation of the nonlinear absorption and refractive index of an a-Si/SiO2superlattice using the Z -scan technique. The real and imaginary parts of χ(3)have been found to be 1.316 × 10−7eus and −5.596 × 10−7eus, respectively, which are about two orders of magnitude greater than those of porous silicon. The results may be attractive for potential application in electro-optics devices.
Optical properties of structurally-relaxed Si/SiO$_2$ superlattices: the role of bonding at interfaces

Pierre Carrier,Laurent J. Lewis,M. W. Chandre Dharma-wardana

DOI: https://doi.org/10.1103/PhysRevB.65.165339

2002-01-26

Abstract:We have constructed microscopic, structurally-relaxed atomistic models of Si/SiO$_2$ superlattices. The structural distortion and oxidation-state characteristics of the interface Si atoms are examined in detail. The role played by the interface Si suboxides in raising the band gap and producing dispersionless energy bands is established. The suboxide atoms are shown to generate an abrupt interface layer about 1.60 Åthick. Bandstructure and optical-absorption calculations at the Fermi Golden rule level are used to demonstrate that increasing confinement leads to (a) direct bandgaps (b) a blue shift in the spectrum, and (c) an enhancement of the absorption intensity in the threshold-energy region. Some aspects of this behaviour appear not only in the symmetry direction associated with the superlattice axis, but also in the orthogonal plane directions. We conclude that, in contrast to Si/Ge, Si/SiO$_2$ superlattices show clear optical enhancement and a shift of the optical spectrum into the region useful for many opto-electronic applications.

Materials Science
Optical Investigations of Directly Wafer-Bonded InP–GaAs Heterojunctions

Yan-Feng Lao,Hui-Zhen Wu,Meng Cao,Chun-Fang Cao

DOI: https://doi.org/10.1149/1.3071521

IF: 3.9

2009-01-01

Journal of The Electrochemical Society

Abstract:The optical characteristics of directly wafer-bonded InP-GaAs heterojunctions have been investigated. By designing the bonding interface at standing-wave antinode. its influence on optical performances of bonded structures is magnified, which facilitates experimental detection using optical methods. Wavelength blueshift and reflectivity falling at the resonance mode were observed in water-bonded InP-GaAs heterostructures. Numerical analysis suggests that two effects involving thickness change of interfacial bonding layers and extra optical loss introduced by bonded junctions are responsible for the experimental observations. and these effects can be attenuated by lowering anneal temperatures and incorporating an InP/InGaAsP superlattice into the surface of InP-based materials. The results are useful for designing effective optical characteristics of wafer-bonded device Structures. (c) 2009 The Electrochemical Society. [DOI: 10.1149/1.3071521] All rights reserved.
In-Plane Optical Anisotropy In Asymmetric Si1-Xgex/Si/Si1-Ygey Superlattices

Rong Yu,Bangfen Zhu,Qiming Wang

DOI: https://doi.org/10.1088/0953-8984/13/24/101

2001-01-01

Abstract:A trilayer asymmetric superlattice, Si/Si1-xGex/Si1-yGey, is proposed, in which the broken inversion symmetry makes the microstructure optically biaxial; in particular, inequivalent interfaces in this heterostructure may cause a polarization ratio as large as about 2.5% in the absence of an external field. The electronic structure and absorption spectra for two types of trilayer superlattice with different parameters are calculated by use of the tight-binding model; the findings indicate the importance of the carrier confinement for the anisotropy value. The effect of external electric field on the optical anisotropy for such structures has also been discussed, and a Pockels coefficient of 10-9 cm V-1 estimated.
Study of Photoacoustic Spectra of Amorphous Semiconductor Superlattice Films

zhichao wang,shuye qiu,shuyi zhang

DOI: https://doi.org/10.1007/978-3-540-48181-2_60

1988-01-01

Abstract:Some a-Si:H/a-SiN x :H superlattice films have been studied by photoacoustic spectroscopy. The “blue shift” phenomenon induced by quantum size effects has been observed. Comparing the photoacoustic spectra and the optical absorption spectra of the same materials, it is shown that the nonradiative recombination of the photogenerated carriers (electrons and holes) in a-Si:H/a SiN x :H superlattices is much larger than that of intrinsic silicon and can be easily investigated by photoacoustic spectroscopy.
Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of GexSi1−x/Si Superlattices

Wang Xun,Zhou G. L.,Sheng C.,Yu M. R.

DOI: https://doi.org/10.1557/PROC-220-235

2020-01-01

Abstract:The glancing angle x-ray diffraction spectra of GexSi1−x/Si superlattices grown by MBE under different temperatures are investigated. Three different types of the intensity distributions of diffraction peaks are observed, which are believed to be corresponded with different situations of interfaces. If all the interfaces in superlattice structure are highly flat, up to 17 orders diffraction peaks are identified with their intensities modulated by a periodical envelope function, otherwise the distribution of diffraction intensities follows simply a decaying function. A quantitative analysis using computer simulation based on the modified Bragg's law and the optical multilayer theory is used to derive the structural parameters including the thicknesses of Si and GexSi1−x layers, superlattice period, Ge content x and the degree of interfacial roughness.
Optical and Interfacial Properties of Epitaxially Fused GaInP/Si Heterojunction

Chengru Wang,Giriprasanth Omanakuttan,Leilei Xu,Tong Liu,Zengli Huang,Sebastian Lourdudoss,Chaoying Xie,Yan-Ting Sun

DOI: https://doi.org/10.1063/1.5141510

IF: 2.877

2020-01-01

Journal of Applied Physics

Abstract:This work investigates the optical and interfacial properties of epitaxially fused direct GaInP/Si heterojunctions realized by the corrugated epitaxial lateral overgrowth (CELOG) approach. To provide a broad analysis of the above heterojunction, photoluminescence (PL), cathodoluminescence (CL), Raman, and high-resolution transmission electron microscopy (TEM) were employed in this study. The enhanced luminescence intensity was observed in the direct GaInP/Si heterojunction in the cross-sectional CL because of the reduced defect density in the CELOG GaInP. The spatial resolution dependent PL and CL spectra of GaInP on Si yielded the composition variation of GaInP arising from the anisotropic growth behavior of CELOG. The Ga composition, x, in GaxIn1−xP/Si at the interface deduced from the lattice constant measured by TEM has a good agreement with the results of PL and CL. Low thermal and lattice mismatch strain in CELOG GaInP on Si were revealed by the Raman spectra. TEM investigation further revealed the atomic structure of some planar defects in CELOG GaInP over Si. It is confirmed that although a thin atomic disorder was observed on the surface of Si substrate, an epitaxially fused GaInP/Si heterojunction with a reduced threading dislocation density of ∼6.4 × 107 cm−2 in comparison to ∼4.8 × 108 cm−2 in the InP seed on Si has been successfully fabricated by the CELOG technique despite about 4% lattice mismatch between GaInP and Si. The findings of this study demonstrate the great potential of the CELOG technique for promoting monolithic integration of III-V/Si-based optoelectronics.
Structural and optical properties of α-Si1-xCx:H thin films prepared by RF-PECVD

Yiying Zhang,Piyi Du,Gaorong Han,Wenjian Weng,Jianxun Wang

2005-01-01

Abstract:Si-C bond formation and its influence on optical properties of α-Si1-xCx:H films, grown by RF plasma enhanced chemical vapor deposition(RF-PECVD) under different conditions, were studied with infrared, Raman and ultraviolet-visible spectroscopy. The preliminary results show that as silicon and carbon contents reach the stoichiometric ratio in the plasma, the probability of Si-C bond formation significantly increases. The density of Si-C bond increases with an increase of RF-power, which may result in bond breaking of Si-H and C-H and in preferential etching of the weak bond by hydrogen. The optical gap of the film, Eg, strongly depends on defect density and Si-C bond configuration. For example, Eg increases with an increase of the Si-C density; and decreases with an increase of defect density and/or with a decrease of H concentration.
Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices

Xun Wang,G. L. Zhou,C. Sheng,M. R. Yu

DOI: https://doi.org/10.1557/proc-220-235

1991-01-01

MRS Proceedings

Abstract:The glancing angle x-ray diffraction spectra of GexSi1−x/Si superlattices grown by MBE under different temperatures are investigated. Three different types of the intensity distributions of diffraction peaks are observed, which are believed to be corresponded with different situations of interfaces. If all the interfaces in superlattice structure are highly flat, up to 17 orders diffraction peaks are identified with their intensities modulated by a periodical envelope function, otherwise the distribution of diffraction intensities follows simply a decaying function. A quantitative analysis using computer simulation based on the modified Bragg's law and the optical multilayer theory is used to derive the structural parameters including the thicknesses of Si and GexSi1−x layers, superlattice period, Ge content x and the degree of interfacial roughness.
Optical And Electrical Properties Of A-Si(1-X)Cx : H And Mu C-Si1-Xcx : H Films Prepared By Using Methane And Xylene Source

Tf Ma,J Xu,L Wang,Xf Huang,Jf Du,W Li,Kj Chen

DOI: https://doi.org/10.1117/12.300726

1998-01-01

Abstract:Hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were fabricated in the plasma-enhanced chemical vapor deposition system by using silane (SiH4) and two kinds of carbon sources, methane (CH4) and xylene (C8H10), respectively. The optical band gap of methane-made a-Si1-xCx:H was varied from 1.9eV to 2.6eV while that of xylene-made a-Si1-xCx:H could be extended to 3.5eV. Fourier Transform Infrared spectra demonstrated the existence of aromatic ring in xylene-made a-Si1-xCx:H, which is much different from the carbon configuration of methane-made a-Si1-xCx:H. Visible light emission at room temperature was observed from xylene-made a-Si1-xCx:H films. The photoluminescence peak shifted from 630nm (1.97eV) to 450nm (2.75eV) when the optical band gap of samples increased from 2.3eV to 3.5eV. KrF pulse laser with wavelength of 248nm was used to crystallize these two kinds of films at room temperature. For both samples, the conductivities Can reach 10(-5)S/cm and are enhanced by over four orders of magnitude.
OBSERVATION OF SPECTRA BY RAMAN SCATTERING ON A-Si:H/a-sinx:h SUPERLATTICES

GUO-GAO LIU,XING-KUI ZHANG,GUANG-XU CHENG,HUA XIA,KUN-JI CHEN

DOI: https://doi.org/10.1142/s0217984989001485

1989-01-01

Modern Physics Letters B

Abstract:Raman scattering has been performed on a- Si:H /a- SiN x: H superlattices in this letter. We have observed the zone-folding effects on longitudinal acoustical phonons in a- Si:H /a- SiN x: H superlattices. The experimental results confirm the theoretical expectation. Additionally, we have observed the modes of interface between the air and samples.

Optical Properties of GD A-Si:H/a-si1−xcx:h Superlattices

The Enhancement Of The Photoconductivity Of A-Sisn(Cl-H) Alloys By Means Of Gd Technique

Optical Properties of A-Si/a-sin_x Superlattices

Study on solid-phase crystallization of B-doped a-Si:H film

Optical properties of delta-doped GaAs and GaAs/Al0.1Ga0.9As superlattices

Optical Properties of Δ-Doped GaAs and GaAs/Al 0.1 Ga 0.9 As Superlattices

Effect of atomic bonding configuration on optical properties of a-Si1−xCx:H thin film

Optical properties of Ge/Si quantum dot superlattices

Photoluminescence Fatigue Effect in GD A-Si : H:O

Direct Observation of Compositionally Homogeneousa-C: H Band-Gap-Modulated Superlattices

Optical Properties of Amorphous Si/Sio2 Superlattice

Optical properties of structurally-relaxed Si/SiO$_2$ superlattices: the role of bonding at interfaces

Optical Investigations of Directly Wafer-Bonded InP–GaAs Heterojunctions

In-Plane Optical Anisotropy In Asymmetric Si1-Xgex/Si/Si1-Ygey Superlattices

Study of Photoacoustic Spectra of Amorphous Semiconductor Superlattice Films

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of GexSi1−x/Si Superlattices

Optical and Interfacial Properties of Epitaxially Fused GaInP/Si Heterojunction

Structural and optical properties of α-Si1-xCx:H thin films prepared by RF-PECVD

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices

Optical And Electrical Properties Of A-Si(1-X)Cx : H And Mu C-Si1-Xcx : H Films Prepared By Using Methane And Xylene Source

OBSERVATION OF SPECTRA BY RAMAN SCATTERING ON A-Si:H/a-sinx:h SUPERLATTICES