Microstructure and Ferroelectric Properties of BaTiO3 Films on LaNiO3 Buffer Layers by Rf Sputtering

Liang Qiao,Xiaofang Bi
DOI: https://doi.org/10.1016/j.jcrysgro.2008.02.019
IF: 1.8
2008-01-01
Journal of Crystal Growth
Abstract:We have fabricated LaNiO3 and BaTiO3 films using the rf sputtering method. The LaNiO3 were deposited on Si substrates, demonstrating a (100) highly oriented structure and nanocrystalline characteristic with a grain size of 30nm. The BaTiO3 thin films were deposited on the LaNiO3 buffer layers, and have exhibited a (100) texture with a thickness of 400nm. A smooth interface is obtained between the LaNiO3 bottom electrode and the BaTiO3 film from cross-section observations by scanning electron microscopy. The bi-layer films show a dense and column microstructure with a grain size of 60nm. Ferroelectric characterizations have been obtained for the BaTiO3 films. The remnant polarization and coercive field are 2.1μC/cm2 and 45kV/cm, respectively. The leak current measurements have shown a good insulating property.
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