Abstract:The high-quality aluminum nitride (AlN) epilayer is the key factor that directly affects the performance of semiconductor deep-ultraviolet (DUV) photoelectronic devices. In this work, to investigate the influence of thickness on the quality of the AlN epilayer, two AlN-thick epi-film samples were grown on c-plane sapphire substrates. The optical and structural characteristics of AlN films are meticulously examined by using high-resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), a dual-beam ultraviolet-visible spectrophotometer, and spectroscopic ellipsometry (SE). It has been found that the quality of AlN can be controlled by adjusting the AlN film thickness. The phenomenon, in which the thicker AlNn film exhibits lower dislocations than the thinner one, demonstrates that thick AlN epitaxial samples can work as a strain relief layer and, in the meantime, help significantly bend the dislocations and decrease total dislocation density with the thicker epi-film. The Urbach's binding energy and optical bandgap (Eg) derived by optical transmission (OT) and SE depend on crystallite size, crystalline alignment, and film thickness, which are in good agreement with XRD and SEM results. It is concluded that under the treatment of thickening film, the essence of crystal quality is improved. The bandgap energies of AlN samples obtained from SE possess larger values and higher accuracy than those extracted from OT. The Bose–Einstein relation is used to demonstrate the bandgap variation with temperature, and it is indicated that the thermal stability of bandgap energy can be improved with an increase in film thickness. It is revealed that when the thickness increases to micrometer order, the thickness has little effect on the change of Eg with temperature.

Elastic-plastic mechanical properties of AlxGa1-xN thin films with high Al composition

Elastic-Plastic Mechanical Properties of AlxGa1-xN Thin Films with High Al Composition

Mechanical Properties of AlxGa1−xN Films with High Al Composition Grown on AlN/sapphire Templates

Nanotribological Characteristics of the Al Content of AlxGa1−xN Epitaxial Films

Chemical Composition Dependent Elastic Strain in Algan Epilayers

Chemical Composition and Elastic Strain in AlInGaN Quaternary Films

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition

Crystalline Quality of InxAl1-xN with Different Indium Contents Around Lattice-Matched to GaN

Nanoscale Anisotropic Plastic Deformation in Single Crystal GaN

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

The effect of N+-implanted aluminum substrate on the mechanical properties of TiN films

Structural and Optical Properties of AlxGa1−xN (0.33 ≤ X ≤ 0.79) Layers on High-Temperature AlN Interlayer Grown by Metal Organic Chemical Vapor Deposition

X-ray Characterization of Composition and Relaxation of AlxGa1−xN(≤x≤1) Layers Grown on GaN/sapphire Templates by Low Pressure Organometallic Vapor Phase Epitaxy

Influence of Grain Orientation on Hardness Anisotropy and Dislocation Behavior of AlN Ceramic in Nanoindentation

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Strain Study of Epitaxial Al1−xGaxN Based on First-Principles Theory

Effect of the N/Al Ratio of AlN Buffer on the Crystal Properties and Stress State of GaN Film Grown on Si(111) Substrate

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films

Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature

Growth-microstructure-thermal property relations in AlN thin films