Preparation of La-doped BiFeO_3 Thin Film and Its Photovoltaic Properties

Xie Yi-Jun,Guo Yi-Ping,Dong Wen,Guo Bing,Li Hua,Liu He-Zhou
DOI: https://doi.org/10.3724/sp.j.1077.2013.12298
IF: 1.292
2013-01-01
Journal of Inorganic Materials
Abstract:The La3+ doped BiFeO3(BFO) thin films were fabricated by Sol-Gel method.The precursor solution was synthesized by dissolving Bi(NO3)3,Fe(NO3)3 and La(NO3)3 in 2-methoxyethanol and BiFeO3 thin films were grown by chemical solution deposition on fluorine doped tin oxide(FTO) glass substrate.The influence of La3+ doping on the band gap and photovoltaic properties of BiFeO3 was studied.The BiFeO3 thin films exhibited polycrystalline-phase perovskite structure.The lattice parameter of BiFeO3decreased with La3+ addition increasing.The band gap of BiFeO3 doped with 10% La3+ doping was 2.71 eV,a little smaller than that of the undoped one.The bandgap of BiFeO3 increased to 2.76 eV with the increase of La3+ doping.The maximal open circuit voltage of 10% La3+-doped BiFeO3 prepared by modified method reached 0.4 V,showing good photovoltaic properties.
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