Preparation and characterization of Bi-doped LuFeO3 thin films grown on LaNiO3 substrate

Liping Zhu,Hongmei Deng,Jian Liu,Lin Sun,Pingxiong Yang,Anquan Jiang,Junhao Chu
DOI: https://doi.org/10.1016/j.jcrysgro.2013.10.039
IF: 1.8
2014-01-01
Journal of Crystal Growth
Abstract:The multiferroic thin films of Lu1−xBixFeO3 (LBFOx, 0≤x≤0.10) were firstly prepared on LaNiO3 coating silicon substrates by the sol–gel method. Structural and morphological characterization of the LBFOx thin films was investigated by X-ray diffraction and atomic force microscopy, respectively. The remnant polarization of Bi-doped LuFeO3 thin film at room temperature reached to 3.1 and 3.6μC/cm2 for x=0.05 and 0.10 at the electric field of 700kV/cm, respectively. The ferroelectric polarization measurements indicate that the potential role of Bi doping in increasing the value of the polarization of LuFeO3 film, and the mechanisms for the U shaped frequency loss tangent curves was discussed.
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