Abstract:Three kinds of metal atoms with different valence electronic configurations, Bi (6s 2 6p 3 ), Y (4d 1 5s 2 ), and Ce (4f 1 5d 1 6s 2 ), were selected to investigate the effect of A-site (La 3 +) doping on electronic band structure, photoelectric properties, and photocatalytic performance of LaFeO 3 perovskite. It was identified that the Bi doped LaFeO 3 presented significantly improved photocatalytic activity towards the reduction of CO 2 , while the Y or Ce doped LaFeO 3 displayed decreased photocatalytic activity compared to the pristine LaFeO 3 . It was revealed that doping of all the three metal atoms resulted in narrowed band gap and thus extended light absorption of LaFeO 3 by lowering its conduction band minimum (CBM). The recombination rate and mobility of the charge carriers were represented by the relative effective mass (D) between holes and electrons for pristine and A-site doped LaFeO 3 . The doping of Bi resulted in increased D value, attributed to the Bi 6s electron states at the valence band maximum (VBM), and thus promoted separation and transfer of the charge carriers and improved photocatalytic activity of LaFeO 3 . In contrast, the doping of Ce resulted in significantly decreased D value, induced by the highly localized Ce 4f hole states at the CBM, and thus higher recombination rate of the charge carriers and decreased photocatalytic activity of LaFeO 3 . Furthermore, the Y doped LaFeO 3 with a slightly decreased D value presented slightly increased recombination rate of the charge carriers and thus decreased photocatalytic activity. Such a work provides new insights into the A-site doping in LaFeO 3 perovskite, which should be helpful for optimizing the electronic band structure and activity of perovskite-type photocatalysts at atomic level.

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