Abstract:The piezoresistive effect of semiconductor materials was discovered firstly in silicon and germanium (Smith, 1954). Dissimilar to the piezoresistive effect of metal materials induced from the change in geometric dimension, the piezoresistive phenomenon in silicon is due to that mechanical stress influences the energy band structure, thereby varying the carrier effective mass, the mobility and the conductivity (Herring, 1955). The gauge factor (GF) is used to characterize the piezoresistive sensitivity and defined as the ratio of the relative resistance change and the generated strain (nondimensional factor). Usually, the GF in silicon is around 100 and changes with stress direction, crystal orientation, doping concentration, etc. Recently, the giant piezoresistances were observed in silicon nanowires (He & Yang, 2006; Rowe, 2008) and metal-silicon hybrid structures (Rowe, et al., 2008), respectively. Although these homogeneous silicon based materials or structures possess high piezoresistive sensitivity, there are still several issues influencing their sensor applications, such as, p-n junction isolation, high temperature instability, high production cost and complex fabrication technologies. As another monatomic silicon material with unique microstructure, polycrystalline silicon has been investigated since the 1960s. The discovery of its piezoresistive effect (Onuma & Sekiya, 1974) built up a milestone that this material could be applied widely in field of sensors and MEMS devices. Moreover, polycrystalline silicon could be grown on various substrate materials by physical or chemical methods, which avoids p-n junction isolation and promotes further its applications for piezoresistive devices (Jaffe, 1983; Luder, 1986; Malhaire & Barbier, 2003). Among numerous preparation methods, the most popular technology is chemical vapour deposition (CVD), which includes APCVD, LPCVD, PECVD, etc. The PECVD method can deposit films on substrates at lower temperatures, but the stability and uniformity of as-deposited films are not good, and the samples could contain a large number of amorphous contents. Subsequently, the metal-induced lateral crystallization (MILC) technique was presented (Wang, et al., 2001). By enlarging grain size and improving crystallinity, the gauge factor of MILC polycrystalline silicon was increased to be about 60. But the MILC polycrystalline silicon-based devices could suffer the contamination from the metal catalyst layer (e.g. Ni, Al, etc.). Compared with the aforementioned technologies, the LPCVD process is a mature and stable CVD method with

High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline silicon

Confined high-pressure chemical deposition of hydrogenated amorphous silicon

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

An overview of the deposition chemistry and the properties of in situ doped polysilicon prepared by low pressure chemical vapour deposition

Crystallographic analysis of high quality poly-Si thin films deposited by atmospheric pressure chemical vapor deposition

[The Influence of Deposition Pressure on the Properties of Hydrogenated Amorphous Silicon Thin Films].

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Advanced atmospheric pressure CVD of a-Si:H using pure and cyclooctane-diluted trisilane as precursor

Preparation of High Quality Polycrystalline Silicon Thin Films by Aluminum-Induced Crystallization

On the Formation of Solid State Crystallized Intrinsic Polycrystalline Germanium Thin Films

Chemical Vapor Deposition of Silicon in a Lamp-Heated Reactor

Deposition of P-Type Nanocrystalline Silicon Using High Pressure in a VHF-PECVD Single Chamber System

High-Rate Deposition of Hydrogenated Amorphous-Silicon Using Microwave Plasma Chemical Vapor-Deposition Process

High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells

Cold Deposition of Large-Area Amorphous Hydrogenated Silicon Films by Dielectric Barrier Discharge Chemical Vapor Deposition

Structural Analysis of Polycrystalline Silicon Thin Films Produced by Two Different ICPCVD Approaches

Kinetics of Silane Decomposition in High-Pressure Confined Chemical Vapor Deposition of Hydrogenated Amorphous Silicon

Polycrystalline Silicon Piezoresistive Nano Thin Film Technology

Effects of hydrogen pressure on hydrogenated amorphous silicon thin films prepared by low-temperature reactive pulsed laser deposition

Low Temperature and High Deposition Rate Fabricating A-Si:H Thin Films and Solar Cells

Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon