Abstract:Single-mode, highly directional and stable photoluminescence (PL) emission has been achieved from porous silicon microcavities (PSMs) fabricated by pulsed electrochemical etching. The full width at half maximum (FWHM) of the narrow PL peak available from a freshly etched PSM is about 9 nm. The emission concentrates in a cone of 10° around the normal of the sample, with a further reduced FWHM of ∼5.6 nm under angle-resolved measurements. Only the resonant peak is present in such angle-resolved PL spectra. No peak broadening is found upon exposure of the freshly prepared PSM to a He-Cd laser beam, and the peak becomes somewhat narrower (∼5.4 nm) after the PSM has been stored in an ambient environment for two weeks. At optimized etching parameters, even a 4-nm FWHM is achievable for the freshly etched PSM. In addition, scanning electron microscopy (SEM) plane-view images reveal that the single layer porous Si formed by pulsed current etching is more uniform and flatter than that formed by direct current (dc) etching, demonstrated by the well-distributed circular pores with small size in the former in comparison with the irregular interlinking pores in the latter. The SEM cross-section images show the existence of oriented Si columns of 10 nm diameter along the etching direction within the active layer, good reproducibility and flat interfaces. It is thus concluded that pulsed current etching is superior to dc etching in obtaining flat interfaces within the distributed Bragg reflectors because of its minor lateral etching.

In Situ Photoluminescence Studies of Silicon Surfaces During Photoelectrochemical Etching Processes

The Influence of Microstructure on Optical Properties of Porous Silicon

Effect of chemical etching combined with laser illumination on the photoluminescence of porous silicon

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

In situ photoluminescence studies of photochemically grown porous silicon

Effect of post-treatment processes on the photoluminescence of porous silicon

Al-assisted Anodic Etched Porous Silicon

Studies on microstructure and photoluminescence property of porous silicon

A Blue Shift Followed by a Red Shift of the Photoluminescence Spectra for Porous Silicon Treated Alternatively by Chemical Etching and Laser Illumination

Study of Photoconductivity and Photoluminescence of Organic/porous Silicon Complexes

On the Role of the Pore Filling Medium in Photoluminescence from Photochemically Etched Porous Silicon

Evolution of photoluminescence in laser illuminating porous silicon

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Photoluminescence and Photoluminescence Excitation Mechanisms for Porous Silicon and Silicon Oxynitride

Photoluminescence Mechanism For Blue-Light-Emitting Porous Silicon

Photoluminescence Peak Energy Evolution for Porous Silicon During Photo-Oxidation and Gamma -Ray Oxidation

Flat Layered Structure and Improved Photoluminescence Emission from Porous Silicon Microcavities Formed by Pulsed Anodic Etching

Effect of Laser Illumination on Oxidization of Porous Silicon

Atomic Force Microscopic Studies of Light-Emitting Porous Silicon

Exploring the Influence of Solvents on Electrochemically Etched Porous Silicon Based on Photoluminescence and Surface Morphology Analysis

Photoluminescence (PL) of porous silicon (PS) processed in H2O2 under illumination