Abstract:Abstract The ability to combine different materials enables a combination of complementary properties and device engineering that cannot be found or exploited within a single material system. In the realm of quantum nanophotonics, one might want to increase device functionality by, for instance, combining efficient classical and quantum light emission available in III–V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate, and broadband reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. However, combining different materials on a single wafer is challenging and may result in low reproducibility and/or low yield. For instance, direct epitaxial growth requires crystal lattice matching for producing of defect-free films, and wafer bonding requires considerable and costly process development for high bond strength and yield. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes that contain InAs quantum dots and which have dimensions up to about 260 μ m × 80 μ m onto a gold-coated silicon substrate. We show that the presence of a back reflector combined with the etching of micropillars significantly increases the extraction efficiency of quantum light from a single quantum dot line, reaching photon fluxes exceeding 8 × 10 5 photons per second. This flux is four times higher than the highest count rates measured from emitters outside the pillars on the same chip. Given its versatility and ease of processing, this technique provides a path to realising hybrid quantum nanophotonic devices that combine virtually any material in which free-standing membranes can be made onto any host substrate, without specific compatibility issues and/or requirements.

Formation of Hybrid Molecules Composed of Ga Metal Particle in Direct Contact with Ingaas Semiconductor Quantum Ring

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Formation of GaAs Double Rings Through Gallium Migration and Nanodrilling

Compound Semiconductor Quantum Dots and Nanowires for Optoelectronic Device Applications

Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters

InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.

Incorporation of random alloy GaBi$_{x}$As$_{1-x}$ barriers in InAs quantum dot molecules: alloy strain and orbital effects towards enhanced tunneling

Super Low Density Ingaas Semiconductor Ring-Shaped Nanostructures

Kinetic calculation analysis of Ga deposition on the morphology evolution of GaAs quantum ring

Formation of inorganic liquid gallium particle-manganese oxide composites

Control of complex quantum structures in droplet epitaxy

Formation of Laterally Ordered Quantum Dot Molecules by in Situ Nanosecond Laser Interference

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates

Self-Assembled Sige Quantum Rings Grown on Si(001) by Molecular Beam Epitaxy

Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots

Evolution Mechanism of InGaN Quantum Dots and Their Optical Properties

O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate

Metal-Solvent Complex Formation at the Surface of InP Colloidal Quantum Dots

Formation of M-Plane Ingan/Gan Quantum Dots Using Strain Engineering of Algan/Aln Interlayers