Abstract:Gallium nitride (GaN)-based high electron mobility transistor (HEMT) power devices have demonstrated great potential applications due to high current density, high switching speed, and low ON-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMT a promising candidate for next-generation power converters. Many of the early GaN HEMTs are devices with Schottky gate, which suffer a high gate leakage and a small gate swing. By inserting an insulator under gate metal, the MIS-HEMT is highly preferred over the Schottky-gate HEMT for high-voltage power switche, owing to the suppressed gate leakage and enlarged gate swing. However, the insertion of the gate dielectric creates an additional dielectric/(Al) GaN interface that presents some great challenges to AlGaN/GaN MIS-HEMT, such as the threshold voltage (Vth) hysteresis, current collapse and the reliability of the devices. It has been reported that the poor-quality native oxide (GaOx) is detrimental to the dielectric/(Al) GaN interface quality that accounted for the Vth instability issue in the GaN based device. Meanwhile, it has been proved that in-situ plasma pretreatment is capable of removing the surface native oxide. On the other hand, low power chemical vapor deposition (LPCVD)-Si3N4 with free of plasma-induced damage, high film quality, and high thermal stability, shows great potential applications and advantages as a choice for the GaN MIS-HEMTs gate dielectric and the passivation layer. In this work, an in-situ pre-deposition plasma nitridation process is adopted to remove the native oxide and reduce surface dangling bonds prior to LPCVD-Si3N4 deposition. The LPCVD-Si3N4/GaN/AlGaN/GaN MIS-HEMT with a high-quality LPCVD-Si3N4/GaN interface is demonstrated. The fabricated MIS-HEMT exhibits a very-low Vth hysteresis of 186 mV at VG-sweep=(-30 V, +24 V), a high breakdown voltage of 881 V, with the substrate grounded. The hysteresis of our device at a higher positive end of gate sweep voltage (VG +20 V) is the best to our knowledge. Switched off after an off-state VDS stress of 400 V, the device has a dynamic on-resistance Ron only 36% larger than the static Ron.

AlGaN/GaN MOS-HEMT With <formula formulatype="inline"><tex Notation="TeX">$\hbox{HfO}_{2}$</tex></formula> Dielectric and <formula formulatype="inline"><tex Notation="TeX">$\hbox{Al}_{2}\hbox{O}_{3}$</tex></formula> Interfacial Passivation Layer Grown by Atomic Layer Deposition

High- ${k}$ HfO 2 -Based AlGaN/GaN MIS-HEMTs with Y 2 O 3 Interfacial Layer for High Gate Controllability and Interface Quality

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Algan/Gan Hemts with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization

Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- $\kappa$ Dielectric

AlN/GaN Metal–insulator–semiconductor High-Electron-mobility Transistor with Thermal Atomic Layer Deposition AlN Gate Dielectric

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

AlGaN/GaN MISHEMTs with AlN Gate Dielectric Grown by Thermal ALD Technique

0.2- AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Passivation

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

O-3-Sourced Atomic Layer Deposition of High Quality Al2o3 Gate Dielectric for Normally-Off Gan Metal-Insulator-Semiconductor High-Electron-Mobility Transistors

Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

AlGaN/GaN E-mode MOS-HEMT Using Atomic-Layer-Deposited HfLaOx As Gate Dielectric

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit

Al 2 O 3 -Dielectric InAlN/AlN/GaN ${\Gamma}$ -Gate MOS-HFETs With Composite Al 2 O 3 /TiO 2 Passivation Oxides

O2 Plasma Alternately Treated ALD-Al2O3 As Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

AlGaN/GaN/InGaN/GaN DH‐HEMTs Structure with an AlN Interlayer Grown by MOCVD

MOCVD grown AlGaN/AlN/GaN HEMT structure with compositionally step-graded AlGaN barrier layer

Performance enhancement of AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) with atomic layer deposition (ALD) of high-k HfAlO gate dielectric layer

High-performance AlGaN/GaN MIS-HEMT Device Based on in Situ Plasma Nitriding and Low Power Chemical Vapor Deposition Si3N4 Gate Dielectrics