Optical and Electrical Properties of ITO Thin Films Prepared by the Sol-Gel Method

潘洪涛,周炳卿,陈霞,李力猛
DOI: https://doi.org/10.3969/j.issn.1001-8735.2008.05.010
2008-01-01
Abstract:Using InCl3·4H2O and SnCl4·5H2O as raw materials,ITO transparent thin films were prepared on common glass substrate by the sol-gel spin-coating process.The effects of heat-treatment temperature and time,and Sn dopant content on the optical and electrical properties of ITO thin films were investigated by UV-Vis transmission spectra and four-probe electrical measurement.The electrical and optical measurement results indicate that the best processing conditions are Sn dopant content being 11%,heat-treatment temperature being 480 ℃,heat-treatment time being 60 min.Under these conditions,the average visible transmittance of the ITO film is about 82% and the sheet resistance is about 390 Ω/□.
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