Optoelectronic Properties of Tio2 Films Prepared by Microplasma Oxidation Method

Wang Song,Wu Xiaohong,Qin Wei,Jiang Zhaohua
DOI: https://doi.org/10.1016/j.matlet.2007.07.047
IF: 3
2008-01-01
Materials Letters
Abstract:Thin titanium dioxide films have been prepared on titanium plates by the microplasma oxidation method in a sulfuric acid solution. The TiO2 films were sensitized with a cis-RuL2(SCN)(2) (L = cis-2, 2'-bipyridine-4, 4'-dicarboxlic acid) ruthenium and implemented into a dye-sensitized solar cell. The influence of voltage (150, 170, 190 and 210 V) on the microstructure of the films were investigated by X-ray diffraction, scanning electron microscopy and X-ray Photoelectricity spectroscopy. The photoelectric properties of the TiO2 films prepared at 190 V were relatively higher. in the experiment, the photovoltage was 700 mV, the photocurrent was 115 mu A/cm(2) and the overall efficiency was 0.075%. (c) 2007 Elsevier B.V. All rights reserved.
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