Abstract:Due to high density of Li-6 isotope and the ability to respond to ionizing radiation through direct charge carrier transport, Li-containing chalcogenides are expected to be the replacement of He-3-tube or neutron reactive material coated semiconductor films for thermal neutron detection. However, the neutron detection efficiency of (LiInSe2)-Li-6 is limited to 82% ascribed to that In-115 isotope captures neutrons and generates gamma rays, which deteriorated the neutron response. Neutron detection efficiency could be improved by gallium substitution since its low neutron capture cross-section. In this work, the electron and hole mobility (mu) of LiIn1-xGaxSe2(x = 0, 0.25, 0.5, 0.75, 1) were studied by first-principles density functional theory (DFT) calculation, which demonstrated the electron mobility (mu(e)) of LiIn0.5Ga0.5Se2 is close to that of LiInSe2 while the hole mobility (mu(h)) is much improved. To further certify, both LiIn0.5Ga0.5Se2 and LiInSe2 crystals were grown under similar condition by vertical Bridgman method, exhibited comparable bandgap and bulk resistivity at room temperature. The charge transport behaviors were evaluated under Am-241@5.48MeV alpha particles. The full energy peak is clearly resolved in the pulse height spectra. The electron and hole mobility-lifetime products of LiIn0.5Ga0.5Se2 are 1.5x10(-5) cm(2)/V and 6.9x10(-5) cm(2)/V, respectively. The resulting mu(e) of LiIn0.5Ga0.5Se2 and LiInSe2 crystals are 270 cm(2)V(-1)s(-1) and 180 cm(2)V(-1)s(-1), respectively, fitted by time of flight (TOF) technique. In addition, the mu(h) of LiIn0.5Ga0.5Se2 is obtained with the value of 110 cm(2)V(-1)s(-1), but the hole response is too weak to be resolved for LiInSe2.

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Measured Stopping Powers for 1–6 MeV 7li Ions in C, Al, Cu, Ag, Au and Pb Foils and in a Thin Si Crystal

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A novel measurement system for silicon melt level in Czochralski crystal pullers based on laser triangulation

Measured stopping power for 11 B ions in Z = 6 – 47 targets

Stopping power for MeV 12C ions in solids

Deeper-band electron contributions to stopping power of silicon for low-energy ions

Stopping powers of LiF thin films deposited onto self-supporting Al foils for swift protons

Molecular Dynamics Simulations of Ion Range Profiles for Heavy Ions in Light Targets

Electronic stopping for protons and α particles from first-principles electron dynamics: The case of silicon carbide

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Investigation of Initial Lithiation of Silicon (100) Using Solid-State 7Li NMR

Direct Measurement of the Linear Energy Transfer of Ions in Silicon for Space Application

Measured stopping power for 16O ions in Al, Cu and Ag foils

Crystal Structures of Silicon-Rich Lithium Silicides at High Pressure

High Precision Measurements of Lithium Isotopic Composition at Sub-Nanogram by MC-ICP-MS with Membrane Desolvation.

A New Method for Measuring Stopping Powers by Erd

Slow Highly Charged Ions Induced Electron Emission from Clean Si Surfaces

Effect of Ga Substitution for in in LiInSe2 Crystals on Carrier Transport Behaviors and Alpha Particles Detection

Angular Distribution and Recoil Effect for 1mev Au+ Ions Through a Si3N4 Thin Foil

Measurements of transmitted electron beam extinction through si crystal membranes