Effect of Ga Substitution for in in LiInSe2 Crystals on Carrier Transport Behaviors and Alpha Particles Detection

Wangqi Xue,Yadong Xu,Bao Xiao,Leilei Ji,Lei Bao,Hongjian Zheng,Lijian Guo,Binbin Zhang,Wanqi Jie
DOI: https://doi.org/10.1016/j.nima.2019.162772
2020-01-01
Abstract:Due to high density of Li-6 isotope and the ability to respond to ionizing radiation through direct charge carrier transport, Li-containing chalcogenides are expected to be the replacement of He-3-tube or neutron reactive material coated semiconductor films for thermal neutron detection. However, the neutron detection efficiency of (LiInSe2)-Li-6 is limited to 82% ascribed to that In-115 isotope captures neutrons and generates gamma rays, which deteriorated the neutron response. Neutron detection efficiency could be improved by gallium substitution since its low neutron capture cross-section. In this work, the electron and hole mobility (mu) of LiIn1-xGaxSe2(x = 0, 0.25, 0.5, 0.75, 1) were studied by first-principles density functional theory (DFT) calculation, which demonstrated the electron mobility (mu(e)) of LiIn0.5Ga0.5Se2 is close to that of LiInSe2 while the hole mobility (mu(h)) is much improved. To further certify, both LiIn0.5Ga0.5Se2 and LiInSe2 crystals were grown under similar condition by vertical Bridgman method, exhibited comparable bandgap and bulk resistivity at room temperature. The charge transport behaviors were evaluated under Am-241@5.48MeV alpha particles. The full energy peak is clearly resolved in the pulse height spectra. The electron and hole mobility-lifetime products of LiIn0.5Ga0.5Se2 are 1.5x10(-5) cm(2)/V and 6.9x10(-5) cm(2)/V, respectively. The resulting mu(e) of LiIn0.5Ga0.5Se2 and LiInSe2 crystals are 270 cm(2)V(-1)s(-1) and 180 cm(2)V(-1)s(-1), respectively, fitted by time of flight (TOF) technique. In addition, the mu(h) of LiIn0.5Ga0.5Se2 is obtained with the value of 110 cm(2)V(-1)s(-1), but the hole response is too weak to be resolved for LiInSe2.
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