Application of strained InGaAs/GaAs quantum-well to laser emitting at 1054 nm

Liu Anping,Han Weifeng,Huang Mao,Luo Qingchun

DOI: https://doi.org/10.3788/HPLPB20102207.1665

2010-01-01

High Power Laser and Particle Beams

Abstract:An InGaAs/GaAs strained quantum-well was prepared by metal-organic chemical-vapor deposition(MOCVD) on GaAs substrate.The growth condition was chosen and a strained buffer layer(SBL) was adopted during the growth.A quantum-well emitting at 1 054 nm was prepared laser with tilted waveguide.The strained QW laser exhibited threshold current of 9 mA and slope efficiency of 0.4 W/A(unused antireflection coating on the facets).The 1 054 nm spectral width of the strained QW laser was 1.6 nm at an injection current of 50 mA.The experimental results indicate: The optimized growth condition and the used strained buffer layer are propitious to significantly improve the laser performance,and the application of strained InGaAs/GaAs quantum-well to laser emitting at 1 054 nm is successful.