Effects of Concentration and Annealing on the Performance of Regioregular Poly(3-Hexylthiophene) Field-Effect Transistors

Tian Xue-Yan,Xu Zheng,Zhao Su-Ling,Zhang Fu-Jun,Yuan Guang-Cai,Xu
DOI: https://doi.org/10.1088/1674-1056/18/8/072
2009-01-01
Abstract:This paper investigates the effects of concentration on the crystalline structure, the morphology, and the charge carrier mobility of regioregular poly(3-hexylthiophene) (RR-P3HT) field-effect transistors (FETs). The RR-P3HT FETs with RR-P3HT as an active layer with different concentrations of RR-P3HT solution from 0.5 wt% to 2 wt% are prepared. The results indicate that the performance of RR-P3HT FETs improves drastically with the increase of RR-P3HT weight percentages in chloroform solution due to the formation of more microcrystalline lamellae and bigger nanoscale islands. It finds that the field-effect mobility of RR-P3HT FET with 2 wt% can reach 5.78 ? 10?3 cm2/Vs which is higher by a factor of 13 than that with 0.5 wt%. Further, an appropriate thermal annealing is adopted to improve the performance of RR-P3HT FETs. The field-effect mobility of RR-P3HT FETs increases drastically to 0.09 cm2/Vs by thermal annealing at 150 ?C, and the value of on/off current ratio can reach 104.
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