Abstract:We report on growth of nanocrystalline Si:H films and devices using a layer-by-layer growth technique, where the growth of a thin amorphous layer by PECVD is followed by chemical annealing in a Helium plasma. The films and devices were grown using a remote, low pressure ECR plasma process. It was found that the structure of the films grown using the layer-by-layer technique depended critically upon whether the annealing was done with hydrogen or helium, and the time taken to do the annealing. When the annealing was done in a hydrogen plasma, the films remained amorphous; in contrast, when the annealing was done in helium, and the annealing time was increased to 20 seconds from 10 seconds, the films became crystalline. The crystallinity of the films was confirmed using Raman spectroscopy and x-ray diffraction. The result obtained here shows that it is not necessary to have a high hydrogen dilution to obtain nanocrystalline films. Rather, the amount of hydrogen already present in an amorphous film is enough to cause crystallization, provided that enough ion flux and perhaps energy are available for converting the amorphous structure to a crystalline structure. Proof - of - concept p+nn+ junction devices were fabricated in these chemically annealed materials, and they showed classical nanocrystalline Si solar cell type behavior.

Formation of Β-Sic Nanowires by Annealing SiC Films in Hydrogen Atmosphere

Ultrafast growth of single-crystalline Si nanowires

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Preparation of CoSi2 using microwave hydrogen plasma annealing

High temperature annealing of hydrogenated amorphous silicon carbide thin films

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Diamond Nanocrystals and Amorphous SiOx Nanowires Formed by Rapid Thermal Annealing of Carbon Film

Growth of Nickel Films on the Surface of Silicon Nanowire

Growth of SiO2 Nanowires Co-Catalyzed by Carbon and Nickel Particles

Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Synthesis of SiC Nanowires in Fluidized Bed and Its Microstructure

Growth and Morphology of One-Dimensional SiC Nanostructures Without Catalyst Assistant

Growth Of Sic Nanorods At Low Temperature

H2-assisted control growth of Si nanowires

Growth of SiC Nanowires from NiSi Solution

Synthesis and Characterization of SiC Nanowires Using Silicon Evaporation

Nanocrystalline Si Films and Devices Produced Using Chemical Annealing with Helium

Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control

Silicon Carbide Formation by Methane Plasma Immersion Ion Implantation into Silicon