Abstract:Metal chalcogenide thin films have a wide variety of applications and potential uses. Tin(II) sulfide is one such material which presents a significant challenge with the need for high quality SnS, free of oxide materials (e.g., SnO2) and higher tin sulfides (e.g., Sn2S3 and SnS2). This problem is compounded further when the target material exhibits a number of polymorphic forms with different optoelectronic properties. Unlike conventional chemical vapor deposition (CVD) and atomic layer deposition (ALD), which rely heavily on having precursors that are volatile, stable, and reactive, the use of aerosol assisted CVD (AA-CVD) negates the need for volatile precursors. We report here, for the first time, the novel and structurally characterized single source precursor (1), (dimethylamido)(N-phenyl-N′,N′-dimethylthiouriate)tin(II) dimer, and its application in the deposition, by AA-CVD, of phase-pure films of SnS. A mechanism for the oxidatively controlled formation of SnS from precursor 1 is also reported. Significantly, thermal control of the deposition process allows for the unprecedented selective and exclusive formation of either orthorhombic-SnS (α-SnS) or zinc blende-SnS (ZB-SnS) polymorphs. Thin films of α-SnS or ZB-SnS have been deposited onto Mo, fluorine doped tin oxide (FTO), Si, and glass substrates at the optimized deposition temperatures of 375 and 300 °C, respectively. The densely packed polycrystalline thin films have been characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, Raman spectroscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy analysis. These data confirmed the phase purity of the SnS formed. Optical analysis of the α-SnS and ZB-SnS films shows distinctly different optical properties with direct band gaps of 1.34 and 1.78 eV, respectively. Furthermore, photoelectrochemical and external quantum efficiency (EQE) measurements were undertaken to assess the optoelectronic properties of the deposited samples. We also report for the first time the ambipolar properties of the ZB-SnS phase.

Growth of polycrystalline SnS films by spray pyrolysis

Investigations on SnS films deposited by spray pyrolysis

Electrical properties of spray pyrolytic tin sulfide films

Optical behaviour of sprayed tin sulphide thin films

Transparent P-Type Conducting Indium-Doped SnO2 Thin Films Deposited by Spray Pyrolysis

The Structural Behaviour of Layers of Sns Grown by Spray Pyrolysis

SnS Films for Photovoltaic Applications: Physical Investigations on Sprayed SnxSy Films

[Study of the Physical Properties of SnS Thin Films Deposited by Ultrasonic Spray Pyrolysis Method].

Preparation and characterisation of sprayed tin sulphide films grown at different precursor concentrations

Influence of Different Substrates on the Properties of Sulfurized Sns Films

Formation of polycrystalline SnS layers by a two-step process

Temperature Controlled Properties of Sub-Micron Thin SnS Films

The Effect of Substrate Surface on the Physical Properties of SnS Films

Preparation of In_2S_3 Thin Films by Ultrasonic Spray Pyrolysis and the Influence of Post Rapid Thermal Process

Characteristics of ZnO Films Prepared by Ultrasonic Spray Pyrolysis Method

Structural studies on SnS films grown by a two-stage process

Synthesis and characterisation of co-evaporated tin sulphide thin films

Pyrolytic spray deposition of ZnSxSe1−x layers for photovoltaic applications

Polymorph-Selective Deposition of High Purity SnS Thin Films from a Single Source Precursor

On the Structural and Optical Properties of Sns Films Grown by Thermal Evaporation Method

Crystalline Behaviour of Sns Layers Produced by Sulfurization of Sn Films Using H2s