Abstract:Thick metamorphic buffers are perceived to be indispensable for the heteroepitaxial integration of III-V semiconductors on silicon substrates with large thermal expansion and lattice mismatches. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistor (HEMT) heterostructures impose a substantial thermal resistance, throttling heat extraction, which reduces device efficiency and lifetime. Herein, bypassing the buffer, we demonstrate the direct growth of GaN after the AlN nucleation layer on silicon by metal-organic vapor phase epitaxy (MOVPE). By varying reactor pressure, we modulate the growth stress in the submicron epilayers and realise threading dislocation densities similar to that in thick buffered structures. We achieve a GaN-to-substrate thermal resistance of (11(+/-)4) ((m^2)K(GW^-1)), an order of magnitude reduction over conventional designs on silicon and one of the lowest on any non-native substrate. AlGaN/AlN/GaN heterojunctions on this platform show a characteristic 2D electron gas (2DEG), the room-temperature Hall-effect mobility of which, at over 2000 (cm^2/(V-s)), rivals the best-reported values. The low-temperature magnetoresistance of this 2DEG shows clear Shubnikov-de-Haas oscillations, a quantum lifetime > 0.180 ps, and tell-tale signatures of spin-splitting. These results may establish a new paradigm for nitride HEMTs, potentially accelerating applications from energy-efficient transistors to fundamental investigations on electron dynamics in this 2D wide-bandgap system.

The growth of an AlGaN/GaN modulation-doped heterostructure by NH3 source molecular beam epitaxy

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Growth and Characterization of Modulation-Doped Alxga1-Xn/Gan Heterostructures

AlGaN/GaN heterostructure on Si (111) substrate grown by MOCVD

Achieving semi-metallic conduction in Al-rich AlGaN: Evidence of Mott transition

High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

The Dynamic Modulation Doping Effect of Gas Molecules on an AlGaN/GaN Heterojunction Surface

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

High-performance InAlGaN/GaN Enhancement-Mode MOS-HEMTs Grown by Pulsed Metal Organic Chemical Vapor Deposition

Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy

High Mobility Algan/Gan Heterostructures Grown on Si Substrates Using A Large Lattice-Mismatch Induced Stress Control Technology

Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon

Electron Mobility Exceeding 10(4) Cm(2)/Vs In An Algan-Gan Heterostructure Grown On A Sapphire Substrate

MBE-grown AlGaN/GaN HEMTs with 186 mS/mm Transcond uctance

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Numerical Simulation of Two-Dimensional Electron Gas Characteristics of a Novel (inxal1−xn/aln)mqws/gan High Electron Mobility Transistor

Step-flow Growth of Al Droplet Free AlN Epilayers Grown by Plasma Assisted Molecular Beam Epitaxy

Room Temperature 2DEG Mobility Above 2350 cm2/V·s in AlGaN/GaN HEMT Grown on GaN Substrate

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier