Piezoelectricity in Excess of 800 pC/N over 400 °C in BiScO 3 –PbTiO 3 –CaTiO 3 Ceramics

Chen Yang,Xijun Xu,Wajid Ali,Yaojin Wang,Yiping Wang,Ying Yang,Lang Chen,Guoliang Yuan

DOI: https://doi.org/10.1021/acsami.1c07492

2021-07-06

Abstract:Ultrasonic sensors are widely applied in industries near room temperature; however, their application at high temperature is still a challenge mainly due to the lack of high-performance piezoelectric ceramics. Here, the 0.364BiScO₃–0.636PbTiO₃–0.005CaTiO₃ ceramic exhibits excellent piezoelectric performances at 20–440 °C. Its piezoelectric coefficient <i>d</i>₃₃ increases from 475 pC/N at 20 °C to 853 pC/N at 360 °C, and then it gradually decreases to 669 pC/N at 440 °C. Furthermore, the planar electromechanical coupling factor <i>k</i>_p gradually increases from 0.59 at 20 °C to 0.67 at 200 °C, and then it remains at a stable value of 0.65–0.67 at 150–350 °C. These achievements are because the ceramic morphotropic phase boundaries have a flat Gibbs free energy versus polarization curve and a wide temperature range. Since the piezoelectric ceramic shows satisfactory piezoelectric properties at 20–440 °C, the corresponding ultrasonic sensors can in situ monitor many high-temperature devices, such as engines, wheels, drills, boilers, etc.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c07492?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c07492</a>.SEM images, dependence of ε_r and dielectric loss on temperature, dependence of ε_r and dielectric loss on frequency, and dependence of leakage current on bias voltage of the BS–PT–<i>x</i>CTO ceramics (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c07492/suppl_file/am1c07492_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology