Abstract:With the rapid development of high-end industries, the demand for high-temperature piezoelectric materials is significantly increasing. However, realizing the ultra-high performance to meet more applications still faces major scientific and engineering challenges of our time. Here, a new Nb/Mn co-doped CaBi4Ti4O15 (CBT) high-temperature piezoelectric material system of CaBi4Ti4-x (Nb2/3Mn1/3) x O15 was synthesized by the conventional solid-state sintering method. The results show that the addition of the dopants tends to break the long-range ferroelectric chain and soften the flexibility of polarization, resulting in more distorted crystal structure and better ferroelectric properties of CBT ceramics. The ultra-high piezoelectric constant (d 33 = 26.8 pC/N) is thus attained in CBT-based ceramics with x = 0.12, which is about several times larger than that of pure CBT ceramics. Moreover, numerous nano-sized layered domain structures that lie on the lateral plane of grains are observed in ceramics, with lower domain wall energy and better dynamic features under electric fields, mainly responsible for the origin of enhanced performance. Besides, excess dopants could make the conductivity mechanism of CBT ceramics transform from p-type to n-type, and also result in a shift of conduction relaxation mechanism from defect dipole rotation polarization to electron relaxation polarization. The work not only provides a promising candidate for high-temperature piezoelectric materials, but also opens a window for optimizing performance by tailoring domain structures using chemical modification.

Deciphering the synergistic action of multiple factors inducing high piezoresponse in CaBi4Ti4O15‐based piezoelectric ceramics

Decoding intrinsic and extrinsic contributions for high piezoelectricity of CBT-based piezoelectric ceramics

Enhanced electrical properties in Ce/Mo co-substituted CaBi 2 Nb 2 O 9 high-temperature piezoelectric ceramic

Achieving Ultra-High Resistivity and Outstanding Piezoelectric Properties by Co-Substitution in CaBi2Nb2O9 Ceramics

Facile Preparation and Performance of Novel High-Tc Xbi(ni1/2ti1/2)o3-(1-x)pb(zr1/2ti1/2)o3 Piezoceramics

Structural Evolution, Electrical Properties and Electric-Field-induced Changes of (0.8− X )pbtio 3 – X BiFeO 3 –0.2bazro 3 System Near the Morphotropic Phase Boundary

Simultaneously Achieved High Piezoelectricity and Resistivity in CaBi2Nb2O9-based Ceramics with High Curie Temperature

The impact of co-doping Ce, W, and Mn on the microstructure and piezoelectric performance of high-temperature piezoelectric ceramics based on CaBi2Nb2O9

Significantly enhanced performance and conductivity mechanism in Nb/Mn co-doped CaBi4Ti4O15 ferroelectrics

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Ultrahigh-temperature Piezoelectric Polycrystalline Ceramics: Dramatically Enhanced Ferroelectricity, Piezoelectricity and Electrical Resistivity in Ca1−3xBi2+3xNb2−xMnxO9

Enhanced electrical performance in CaBi4Ti4O15 ceramics through synergistic chemical doping and texture engineering

Superior Piezoelectric Performance in Textured CaBi2Nb2O9 Ferroelectric Ceramics through Rare-Earth Gadolinium Doping and Spark Plasma Sintering

Significantly Enhanced Electrical Properties in CaBi2Nb2O9-based High-Temperature Piezoelectric Ceramics

Enhanced Piezoelectric Activity with Good Thermal Stability and Improved Electrical Resistivity in Ta–Mn Co-Doped CaBi4Ti4O15 High-Temperature Piezoceramics

Morphotropic Phase Boundary And Electric Properties In (1-X)Bi(0.5)Na(0.5)Tio(3-)Xbicoo(3) Lead-Free Piezoelectric Ceramics