Sub-5 Kev Electron-Beam Lithography in Hydrogen Silsesquioxane Resist

Vitor R. Manfrinato,Lin Lee Cheong,Huigao Duan,Donald Winston,Henry I. Smith,Karl K. Berggren

DOI: https://doi.org/10.1016/j.mee.2011.05.024

IF: 2.3

2011-01-01

Microelectronic Engineering

Abstract:We fabricated 9–30nm half-pitch nested Ls and 13–15nm half-pitch dot arrays, using 2keV electron-beam lithography with hydrogen silsesquioxane (HSQ) as the resist. All structures with 15nm half-pitch and above were fully resolved. We observed that the 9 and 10-nm half-pitch nested Ls and the 13-nm-half-pitch dot array contained some resist residues. We obtained good agreement between experimental and Monte-Carlo-simulated point-spread functions at energies of 1.5, 2, and 3keV. The long-range proximity effect was minimal, as indicated by simulated and patterned 30nm holes in negative-tone resist.