Abstract:Cation-based resistance switches have been considered as promising candidates for memory cells and other novel devices. So far, the most accepted switching processes of such devices are based on the formation/rupture of metallic filaments between two electrodes. Although many recent studies have identified the existence of H 2 O (and resulting -OH groups) in such devices, their effects on the switching process are still unclear. In the present work, by taking Cu/Ta 2 O 5 /Pt device as an example, we have theoretically revealed that H ions may dissociate from -OH groups and accumulate onto the Cu filament in amorphous Ta 2 O 5 . After that, the adsorbed H ions will induce a series of changes, such as the elongation of the adjacent Cu-Cu bonds, the weakening of the Cu-Cu bonds, the increase of charge on Cu cations, and the enhancement of diffusivities of Cu cations, all of which eventually lead to the rupture of the Cu filament. Interestingly, our proposed 'H-triggered metal filament rupture' model is similar to the widely studied 'hydrogen embrittlement phenomenon'. The crucial point of this model is the high catalytic activity of Cu towards the splitting of -OH group. Consequently, it is expected that this model could be applicable to other Cu-cation based resistance switches. Cation-based resistance switches have been considered as the promising candidates for memory cells and other novel devices. So far, the most accepted switching processes of such devices are based on the forming/rupture of metallic filaments between two electrodes. Although many recent studies have identified the existence of H 2 O (and as-resulted -OH groups) in such devices, their effects on the switching process are still unclear. In the present work, by taking Cu/Ta 2 O 5 /Pt device as an example, we have theoretically proposed that the H ions take the very important role during the rupture process of Cu filament in such device. Interestingly, our proposed 'H-triggered metal filament rupture' model is similar to the widely studied 'Hydrogen Embrittlement' phenomenon in the industry field, which serves as additional evidence supporting the credibility of such model. The crucial point of mechanism of this model is considered to be the high catalytic activity of Cu towards the splitting of -OH group. Consequently, it is expected that this model could be applicable to other Cu-cation based resistance switches.

A Comparative Study on the Diffusion Behaviors of Metal and Oxygen Ions in Metal-Oxide-Based Resistance Switches via ab Initio Molecular Dynamics Simulations

Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x∼ 1

Migration of Interfacial Oxygen Ions Modulated Resistive Switching in Oxide-Based Memory Devices

Parametric study of filament and gap models of resistive switching in TaO$_x$-based devices

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts.

Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies

Oxygen Migration and Proton Diffusivity in Transition-Metal (mn, Fe, Co, and Cu) Doped Ruddlesden–Popper Oxides

The effect of Ta oxygen scavenger layer on HfO$_2$-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport

Oxygen Migration Around the Filament Region in HfOx Memristors

Identifying and Engineering the Electronic Properties of the Resistive Switching Interface

Oxygen Migration Induced Resistive Switching Effect And Its Thermal Stability In W/Taox/Pt Structure

Influences Of Interface States On Resistive Switching Properties Of Tiox With Different Electrodes

Resistive Switching Mechanisms Relating to Oxygen Vacancies Migration in Both Interfaces in Ti/Hfox/Pt Memory Devices

Role of Oxygen Ion Migration in the Electrical Control of Magnetism in Pt/Co/Ni/HfO2 Films

Understanding the resistance switching mechanisms of binary metal oxides with the percolation model

Hydrogen-triggered metal filament rupture in Cu-based resistance switches

Improving HfO 2 -Based Resistive Switching Devices by Inserting a TaO x Thin Film via Engineered In Situ Oxidation

Non‐Oxidative Mechanism in Oxygen‐Based Magneto‐Ionics

The influence of transition metal solutes on the dissolution and diffusion of oxygen in tungsten

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

Ultrahigh oxygen ion mobility in ferroelectric hafnia