Effect of oxygen vacancy and A-site-deficiency on the dielectric performance of BNT-BT-BST relaxors

Xiao Liu,Rongrong Rao,Jing Shi,Jiayi He,Yunxia Zhao,Jia Liu,Huiling Du

DOI: https://doi.org/10.1016/j.jallcom.2021.159999

IF: 6.2

2021-09-01

Journal of Alloys and Compounds

Abstract:<p>There is an urgent need for dielectrics to suit multitudinous burgeoning applications with high-temperature dielectric stability. Here the intrinsic defect and polarization mechanism are investigated in A-site-deficient 0.66(Bi_0.5Na_0.5)TiO₃-0.06BaTiO₃-0.28(Bi_<em>x</em>Sr_{1–3<em>x</em>/2}▯_<em>x</em>/2)TiO₃ (BNT-BT-BST) relaxors where strontium vacancies (<span class="math"><math>VSr′′</math></span>) are designed to compensate the negative charge shortage when Sr²⁺ is substituted by Bi³⁺ (<span class="math"><math>BiSr•</math></span>). Incremental Bi³⁺ is conducive to the polarization in nano-regions at high temperatures resulting in an enhancement of the temperature stability of dielectric permittivity. It reveals a strong defect induced disorder accompanied with slightly increased dielectric loss due to the partial reduction of Ti⁴⁺. Furthermore, the existing oxygen vacancies confirmed by X-ray photoelectron and atmosphere dependent <em>ac</em> impedance spectroscopies are suppressed effectively when sintering at O₂ for BNT-BT-BST to the benefit of maintaining stable dielectric properties. Remarkably high energy storage density and efficiency are achieved simultaneously under relatively low electric fields. This work not only provides promising candidates in Bi_0.5Na_0.5TiO₃ (BNT) based relaxors but also demonstrates an effective route considering the importance of oxygen vacancies in the optimization for dielectric applications.</p>

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering