Optimized Energy Storage Performance of SBT-based Lead-Free Relaxor Ferroelectric Thin Film

Jinfeng Zhou,Hao Zhu,Jun Wang,Si Gao,Jin Luo,Yunfei Liu,Yinong Lyu
DOI: https://doi.org/10.1007/s10854-023-10692-4
2023-01-01
Journal of Materials Science Materials in Electronics
Abstract:Relaxor ferroelectric thin films, that demonstrate high energy storage performances due to their slim polarization–electric field hysteresis loops, have attracted extensive attentions in the application of miniaturized advanced pulsed power electronic systems. However, the ubiquitous defects induced in the thin films, for example, due to the volatilization of cations, limit the energy storage performance to a great extent due to the reduced breakdown strength. Here, the shallow trap defects, but not the oxygen vacancy, in 0.9Sr0.7Bi0.2TiO3-0.1BaTiO3 (SBT-BT) relaxor ferroelectric thin films are effectively suppressed by the Mn doping. An improved high energy storage density of 55 J/cm3 and an optimized high energy storage efficiency of 80.9
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