Abstract:Defects are inevitably present in materials and always can affect their properties. Here we perform first-principles calculations to systematically investigate the stability and electronic structures of 10 kinds of point defects in 2D semiconducting phosphorene, including the Stone Wales (SW-1 and SW-2) defect, and single (SV-(5 vertical bar 9) and SV-(55 vertical bar 66)) and double (DV-(5 vertical bar 8 vertical bar 5)-1, DV-(5 vertical bar 8 vertical bar 5)-2, DV-(555 vertical bar 777)-1, DV-(555 vertical bar 777)-2, DV-(555 vertical bar 777)-3, and DV-(4 vertical bar 10 vertical bar 4)) vacancy defects. We find that these defects are all created quite easily in phosphorene with higher areal density compared with graphene and silicene. Most of them are easy to distinguish from each other and correlate with their defective atomic structures with simulated scanning tunneling microscopy images at positive bias. The SW, DV-(5 vertical bar 8 vertical bar 5)-1, DV-(555 vertical bar 777), and DV-(4 vertical bar 10 vertical bar 4) defects have little effect on phosphorene's electronic properties, and defective phosphorene monolayers still show semiconducting with similar band gap values to perfect phosphorene. The SV-(5 vertical bar 9) and DV-(5 vertical bar 8 vertical bar 5)-2 defects can introduce unoccupied localized states into phosphorene's fundamental band gap. Specifically, the SV-(5 vertical bar 9) and SV-(55 vertical bar 66) defects can induce hole doping in phosphorene, and the SV-(5 vertical bar 9) defect can result in local magnetic moments in phosphorene different from all other defects.

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