Abstract:Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can be explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

Defects in Phosphorene

Defect in Phosphorene

Point Defects in Lines in Single Crystalline Phosphorene: Directional Migration and Tunable Band Gaps.

Defect-Induced Different Band Alignment and Transport of All-Phosphorene Devices from First Principles

Strain Induced Variation of PFOS Adsorption on Pristine and Defected Phosphorene: A DFT Study

Charged Vacancy Defects in Black Phosphorus Monolayer Phosphorene

Remarkably low-energy one-dimensional fault line defects in single-layered phosphorene

Transport And Optical Properties Of Single- And Bilayer Black Phosphorus With Defects

How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin-Orbit Splitting, and Strain.

Atomic structures and electronic properties of phosphorene grain boundaries

Effect of atomic-scale defects and dopants on phosphorene electronic structure and quantum transport properties

Influence of structural defect on thermal–mechanical properties of phosphorene sheets

Electronic Properties of Germanene on Pristine and Defective MoS2 : A First-Principles Study

Electron-beam-induced adatom-vacancy-complexes in mono- and bilayer phosphorene

Stone–Wales Defect in Graphene

Charged Defects in Two-Dimensional Semiconductors of Arbitrary Thickness and Geometry: Formulation and Application to Few-Layer Black Phosphorus

Stone-Wales Defects in Silicene: Formation, Stability and Reactivity of Defect Sites

The effects of vacancy and heteroatoms-doping on the stability, electronic and magnetic properties of blue phosphorene

Influences of Stone–Wales defects on the structure, stability and electronic properties of antimonene: A first principle study

The Role of H2O and O2 Molecules and Phosphorus Vacancies in the Structure Instability of Phosphorene

Intrinsic Point Defects in Ultrathin 1T-PtSe2 Layers