Abstract:The high-temperature oxidation mechanism of silicon carbide (SiC) is crucial for designing thermal protection systems in aircraft. This study explored the oxidative chemical reaction processes and mechanism on SiC surface and interfaces within the temperature range of 300-2300 K by using reactive molecular dynamics simulation. The oxygen impact on the silica (SiOx) growth of the SiC surface was analyzed, which shows a progressive increase of silica thickness. The simulation results indicated that the oxidation process of SiC was a typical passive oxidation mechanism. With the environmental temperature rising and oxygen impact, the increase of oxidation thickness on the SiC surface undergoes three oxidizing reaction processes: little chemical adsorption of oxygen molecules on the initial surface, rapid oxidation of silicon and carbon, and dramatic oxidation of the interface between the oxidation layer and SiC. Additionally, this work studied the mechanism of oxidation thickness growth and chemical diffusion of oxygen. The oxidation rate is weakened according to the oxygen atom diffusion barrier effect of silica repulsion. Moreover, the kinetic parameters were statistically calculated by fitting the growth of Si-O bonds and their reaction rate constants. Subsequently, the activation energy and pre-exponential factors were derived by using the Arrhenius equation to model the chemical reaction kinetics of the thermal oxidation process. The chemical reaction behaviors of the two stages could be concluded as follows: (i) in stage I, the initial oxidation is reaction rate limiting; (ii) in stage II, SiC oxidation is limited by both the oxidation reaction rate and the oxygen diffusion coefficient of the oxidation layer. The activation energy of stage II increased compared with stage I due to the oxygen atoms diffusion barrier between the oxidation layers. This study on the oxidation and ablation mechanism of the SiC surface at the atomic scale would provide insight into understanding thermal oxidation behavior and the design of ceramic materials.

Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon

Microstructure and oxidation behavior of SiOC coatings on C/C composites co-deposited with HMDS and TEOS by using CVD process

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Deposition voltages on the phase evolutions, microstructures, and oxidation behaviors of thermal-resistance Glass-MoSi2-SiC coating

Revisiting single-crystal silicon oxidation: A comprehensive analysis of crystal structural transformation to SiO2

An Investigation of the Properties of Silicon Oxide Prepared by Oxidation of Silicon in Chlorine-Containing Ambients at 850°C

High Temperature Oxidation Behavior of SiC Coating Materials

Formation of thin Crsi2 films by the solid-phase ion-plasma method and their thermoelectric properties

Investigation of the oxidation mechanism of Si-Al2O3-fused mullite containing Ti2O3 composite

Study Of Dry Oxidation Of Triangle-Shaped Silicon Nanostructure

Temperature-Dependent Oxidation Behavior of Silicon Carbide Surface: Reactive Molecular Dynamics Simulations

Unveiling high-temperature stability and growth dynamics of CVD-SiOC coatings across different deposition conditions and environments

Temperature dependence mechanism of high-temperature oxidation of transition metal silicide MoSi2

Crystallinity dependence of high-temperature oxidation of silicoboron carbonitride monoliths

Evolution of Microstructure and Radiative Property of Metal Silicide–glass Hybrid Coating for Fibrous ZrO 2 Ceramic During High Temperature Oxidizing Atmosphere

Synchrotron investigations of electronic and atomic-structure peculiarities for silicon-oxide films’ surface layers containing silicon nanocrystals

Micromorphology evolution, growth mechanism, and oxidation behaviour of the silicon-rich MoSi 2 coating at 1200 °C in air

FT-IR study of silicon dioxide films fabricated by rapid thermal oxidation

Investigation of the Role of Silicon in TiAlSiN Coating Deposited on TiAl Alloys during Long-term Oxidation

Modeling the Initial Stages of Si(100) Thermal Oxidation: An Ab-initio Approach

Structural and Phase Transformations in Plasma-Spray ZrB2–SiC–AlN Coatings on a C/C–SiC Substrate After High-Temperature Thermal Cyclic Heating