Abstract:Doped HfO2 thin films, which exhibit robust ferroelectricity even with aggressive thickness scaling, could potentially enable ultralow-power logic and memory devices. The ferroelectric properties of such materials are strongly intertwined with the voltage-cycling-induced electrical and structural changes, leading to wake-up and fatigue effects. Such field-cycling-dependent behaviors are crucial to evaluate the reliability of HfO2-based functional devices; however, its genuine nature remains elusive. Herein, we demonstrate the coupling mechanism between the dynamic change of the interfacial layer and wake-up/fatigue phenomena in ferroelectric Hf1-xZrxO2 (HZO) thin films. Comprehensive atomic-resolution microscopy studies have revealed that the interfacial layer between the HZO and neighboring nonoxide electrode experienced a thickness/composition evolution during electrical cycling. Two theoretical models associated with the depolarization field are adopted, giving consistent results with the thickening of the interfacial layer during electrical cycling. Furthermore, we found that the electrical properties of the HZO devices can be manipulated by controlling the interface properties, e.g., through the choice of electrode match and hybrid cycling process. Our results unambiguously reveal the relationship between the interfacial layer and field-cycling behaviors in HZO, which would further permit the reliability improvement in HZO-based ferroelectric devices through interface engineering.

Physical origin of the endurance improvement for HfO2-ZrO2 superlattice ferroelectric film

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance (>1014) of HfZrO Anti-ferroelectrics for DRAM Applications

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance <tex>$(> 10^{14})$</tex> of HfZrO Anti-ferroelectrics for DRAM Applications

HfO 2 –ZrO 2 Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance

Dynamic evolution of oxygen vacancies during cycling in antiferroelectric HfxZr1−xO2

HfO2-ZrO2 Superlattice Ferroelectric Capacitor with Improved Endurance Performance and Higher Fatigue Recovery Capability

Unveiling the Role of Local Stress in Enhancing Ferroelectric Properties and Endurance of HfO2/ZrO2 Superlattice Structures

Origin of Doping-Induced Endurance Improvement and Wake-up Effect Reduction in Ferroelectric Thin Films

HfO 2 -ZrO 2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability

HfO2-ZrO2 Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

Greatly enhanced fatigue resistance in superlattices

Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1-xZrxO2

Endurance Improvement of Si FeFET by a Fully CMOS-Compatible Process: Insertion of HfO x at Hf 0.5 Zr 0.5 O 2 /SiO x Interface to Suppress Oxygen Vacancy Generation

Ferroelectric and Interlayer Co-optimization with In-depth Analysis for High Endurance FeFET

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

A Comparative Study on the Polarization, Reliability, and Switching Dynamics of HfO 2 -ZrO 2 -HfO 2 and ZrO 2 -HfO 2 -ZrO 2 Superlattice Ferroelectric Films

Greatly Enhanced Fatigue Resistance in Hf 0.5 Zr 0.5 O 2 / La 0.7 Sr 0.3 MnO 3 Superlattices

Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf 1– x Zr x O 2

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer