Abstract:This study presents a novel approach using silicon‐based valley photonic crystals (VPCs) for ultrafast and unidirectional heat transfer on a microscale. In the infrared wavelength region, the VPCs achieve significant thermal rectification and maintain high transmission efficiency, even in the presence of defects. This method is robust, defect‐immune, and fully CMOS compatible, addressing the limitations of traditional thermal conduction methods. Effective and rapid heat transfer is critical to improving electronic components' performance and operational stability, particularly for highly integrated and miniaturized devices in complex scenarios. However, current thermal manipulation approaches, including the recent advancement in thermal metamaterials, cannot realize fast and unidirectional heat flow control. In addition, any defects in thermal conductive materials cause a significant decrease in thermal conductivity, severely degrading heat transfer performance. Here, the utilization of silicon‐based valley photonic crystals (VPCs) is proposed and numerically demonstrated to facilitate ultrafast, unidirectional heat transfer through thermal radiation on a microscale. Utilizing the infrared wavelength region, the approach achieves a significant thermal rectification effect, ensuring continuous heat flow along designed paths with high transmission efficiency. Remarkably, the process is unaffected by temperature gradients due to the unidirectional property, maintaining transmission directionality. Furthermore, the VPCs' inherent robustness affords defect‐immune heat transfer, overcoming the limitations of traditional conduction methods that inevitably cause device heating, performance degradation, and energy waste. The design is fully CMOS compatible, thus will find broad applications, particularly for integrated optoelectronic devices.

Improvement of temperature homogeneity of a silicon wafer heated in a rapid thermal system (RTP: Rapid Thermal Process) by a filtering window

A MIMO Decoupling Algorithm for Rapid Heating Systems of Wafers

Optimization of rapid thermal processing for uniform temperature distribution on wafer surface

Design of Single-Wafer Furnace and Its Rapid Thermal Processing Applications

Thermal design aspects for improving temperature homogeneity of silicon wafer during thermal processing in microlithography

Rapid thermal processing with microwave heating

Modelling of wafer heating during rapid thermal processing

Observer-based temperature control of an LED heated silicon wafer

Thermal uniformity of 12-in silicon wafer during rapid thermal processing by inverse heat transfer method

Thermal uniformity of 12-in silicon wafer in linearly ramped-temperature transient rapid thermal processing

Effect of Rapid Thermal Processing on High Temperature Oxygen Precipitation Behaviour in Czochralski Silicon Wafer

An In Situ Approach to Real-Time Spatial Control of Steady-State Wafer Temperature During Thermal Processing in Microlithography

Analysis of the Effect of Heating Control Conditions on Temperature Distribution in a Wafer During Rapid Thermal Processing With Lamp Heaters

Effects of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Wafer

Low Temperature Silicon Epitaxy in a Single-Wafer RTP Reactor with Microwave Heating

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Design. Fabrication, and Test of an Embedded Si-Glass Microchannel Heat Sink for High-power RF Application

Ultrafast Unidirectional On‐Chip Heat Transfer

Simulation of temperature profile and design of heat transfer structure for reactor of film growth on Si-wafer

Thermal Modeling of Wafer Based Precision Glass Molding Process

Rapid Thermal Processing and the Control of Oxygen Precipitation Behaviour in Silicon Wafers