Conversion of silicon wafer type from perfect-interstitial to perfect-vacancy by rapid thermal process
Armando Giannattasio
DOI: https://doi.org/10.1016/j.jcrysgro.2024.127658
IF: 1.8
2024-04-01
Journal of Crystal Growth
Abstract:Vacancies, self-interstitials, and Frenkel pairs represent the basic point defects in silicon single-crystals and are unavoidably introduced in the ingots during the manufacturing process. In semiconductor technology, several problems are caused by points defects that are not at thermodynamic equilibrium. For this reason, virtually defect-free silicon wafers having a small residual concentration of vacancies in the bulk (“Perfect-vacancy”, or Pv silicon) are solely used for the fabrication of advanced microelectronic devices, whereas similar wafers containing a residual concentration of silicon self-interstitials (Pi silicon) are often regarded as unsuitable substrates for device fabrication. This paper describes the possibility of using Pi silicon wafers, after their conversion to Pv, for those applications requiring only vacancy-rich perfect silicon as the substrate. The conversion from Pi to Pv is achieved in these wafers by using rapid thermal annealing at high temperature to produce Frenkel pairs first and to re-install a specific vacancy concentration in the bulk of the wafer later, thus reassigning a new Pv character to the silicon substrate.
materials science, multidisciplinary,physics, applied,crystallography