Dissolution of Oxygen Precipitates in Silicon Treated by Rapid Thermal Process

林磊,杨德仁,马向阳,李立本,阙端麟
DOI: https://doi.org/10.3321/j.issn:0253-4177.2004.10.015
2004-01-01
Abstract:The effect of high temperature in rapid thermal process (RTF) on the dissolution of oxygen precipitate generated by two-step (low-high) annealing is investigated. It is verified that the high temperature in RTF can efficiently dissolve the existing oxygen precipitates, indicating that the annealing temperature other than time is the determinative factor for the dissolution of oxygen precipitates. Moreover, the mechanism for the dissolution of oxygen precipitates by RTF is discussed.
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