Abstract:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has superior performances in terms of high switching frequency and low power loss, but its widespread applications in markets have been partly hindered by its ruggedness and reliability. Overcurrent operation is a common phenomenon which causes overheat of power devices and further leads to degradation or even device failures in power electronic systems. However, in- depth degradation mechanism and limiting factors of repetitive overcurrent capability have not been comprehensively studied yet. In this article, we investigated the conduction and the switching overcurrent stress separately to figure out the roles of each operation processes in the degradation of 1.2-kV SiC planar-gate MOSFETs for the first time. It is observed that the conduction overcurrent stress causes a positive shift of threshold voltage, while the switching overcurrent stress leads to a negative shift of threshold voltage as well as larger gate leakage current. Electrons captured at the SiC/SiO2 interface may be the reason for the positive shift of threshold voltage, while the negative shift of threshold voltage may be due to the injection and accumulation of the holes into the gate oxide at JFET and near-channel region. Both experimental results and simulation analysis show that the switching overcurrent stress plays a major role in the degradation of 1.2-kV SiC planar-gate MOSFETs under repetitive overcurrent stress. In addition, the influence of major limiting factors, including overcurrent level, overcurrent duration, and drain–source voltage, is also investigated to evaluate the reliability of SiC planar-gate MOSFETs under different overcurrent conditions, which will provide a useful guidance for dedicated design and utilization of SiC MOSFETs.

Precursors of gate oxide degradation in SiC power MOSFETs

Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Gate Oxide Degradation of SiC MOSFET in Switching Conditions

Investigation of Inrush Current Induced Trench Gate Degradation inside SiC MOSFET by New Fowler- Nordheim Localization Methodology

Comparative Investigation on Aging Precursor and Failure Mechanism of Commercial SiC MOSFETs Under Different Power Cycling Conduction Modes

Degradation Behavior and Defect Analysis for SiC Power MOSFETs Based on Low-Frequency Noise Under Repetitive Power-Cycling Stress

Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs

Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress

Understanding the Degradation of 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Over-load Current Stress

Oxide Breakdown Reliability of SiC MOSFET

Impacts of SiC-MOSFET Gate Oxide Degradation on Three-Phase Voltage and Current Source Inverters

Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

An Online Gate Oxide Degradation Monitoring Method for SiC MOSFETs based on Turn-ON Gate Voltage Filtering

Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Investigation On Degradation Mechanism And Optimization For Sic Power Mosfets Under Long-Term Short-Circuit Stress

Investigation on Degradation of SiC MOSFET Under Accelerated Stress in a PFC Converter

Analysis and Suppression for Gate Oscillation Caused by Body Diodes on Paralleled SiC MOSFETs Application

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Effects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETs