E. A. Rabiea,M. S. AboGhazala,M. M. Zadia
Abstract:Abstract Enhancing the characteristics of amorphous semiconductor thin films is imperative for a multitude of applications. The present study examines the impact of Cd nanolayers deposited on a thin film of amorphous Si. The X-ray test showed that the thin silicon film had less of an amorphous structure after a nanolayer of cadmium was added. There has also been the appearance of new phases, and as the thickness of the Cd nanolayer increases, so does the intensity of these phases. Using a field emission scanning electron microscope, it was seen that nanoparticles were developed and subsequently transformed into clusters as the thickness of the Cd nanolayer grew. The absorbance was maximized at 750 nm and near-infrared region after depositing Cd nanolayers, while transmittance was reduced, especially at 100 nm thicknesses. The energy gap was reduced, with a decrease from 5.1 to 1.8 electron volts (eV). However, an increase in the band tails was also noted, rising from 0.7 to 4.9 eV. An increase in the values of the refractive index ( n ) and extinction coefficient ( k ) was observed following the deposition of Cd nanolayers of different thicknesses.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to improve the structural and optical properties of silicon (Si) thin films by depositing cadmium (Cd) nano - layers of different thicknesses on them. Specifically, the research aims to explore the effects of Cd nano - layers on the crystalline phase, amorphous structure, and optical properties (such as absorptivity, transmittance, reflectivity, refractive index, and extinction coefficient, etc.) of Si thin films. Through this research, the author hopes to find an effective method to optimize the performance of semiconductor materials to meet various application requirements, such as in electronic devices, solar cells, and photoelectric devices.
### Main research contents:
1. **Structural characteristics**:
- The influence of Cd nano - layers on the crystalline phase of Si thin films was analyzed by X - ray diffraction (XRD). The results show that as the thickness of the Cd nano - layer increases, new crystalline phases gradually appear, and the intensity of these phases also increases.
- It was observed by scanning electron microscopy (SEM) that as the thickness of the Cd nano - layer increases, nanoparticles aggregate to form cluster - like structures.
2. **Optical characteristics**:
- The effects of Cd nano - layers of different thicknesses on the absorptivity, transmittance, and reflectivity of Si thin films were measured by UV - Vis spectrophotometer. The results show that the addition of Cd nano - layers significantly improves the absorptivity of the thin films, especially in the visible light (750 nm) and near - infrared regions.
- Parameters such as the optical bandgap, absorption coefficient, refractive index, and extinction coefficient of the thin films were calculated. It was found that the addition of Cd nano - layers causes the direct bandgap to decrease from 5.1 eV to 1.8 eV, and at the same time, the width of the band tail also increases.
### Main conclusions:
- **Structural change**: The addition of Cd nano - layers significantly improves the crystallinity of Si thin films and reduces the proportion of the amorphous structure.
- **Improvement of optical performance**: The addition of Cd nano - layers significantly improves the absorptivity of the thin films, reduces the transmittance, and at the same time increases the refractive index and extinction coefficient.
- **Application prospects**: These improved properties make Cd - nano - layer - modified Si thin films have broad application potential in fields such as electronic devices, solar cells, and photoelectric devices.
### Formula display:
- The **Scherrer equation** is used to calculate the grain size \( D \):
\[
D=\frac{K\lambda}{\beta\cos(\theta)}
\]
where \( K \) is the shape factor (close to 1), \( \lambda \) is the X - ray wavelength, \( \theta \) is the Bragg angle, and \( \beta \) is the full width at half maximum (FWHM) of the diffraction peak.
- **Optical bandgap calculation**:
\[
\alpha h\nu = A(h\nu - E_g)^n
\]
where \( \alpha \) is the absorption coefficient, \( h\nu \) is the incident photon energy, \( E_g \) is the bandgap energy, \( A \) is a constant, and \( n \) is 1/2 and 2, corresponding to the direct and indirect bandgaps respectively.
- **Urbach energy**:
\[
\alpha=\alpha_0 e^{h\nu/E_U}
\]
where \( \alpha_0 \) is a constant, \( h\nu \) is the photon energy, and \( E_U \) is the Urbach energy.
- **Refractive index calculation**:
\[
n = \frac{(1 + R)}{(1 - R)}+\sqrt{\frac{4R}{(1 - R)^2}}-K^2
\]
where \( R \) is the optical reflectivity and \( K \) is the extinction coefficient.
Through these studies, the author has demonstrated the great potential of Cd nano - layers in improving the performance of Si thin films, providing an important reference for future research in related fields.