Abstract:Meeting the demanding performance requirements of semiconductor devices without compromising reliability is a challenging endeavor. This study introduces a novel approach to streamlining the semiconductor design process. A machine learning‐assisted design framework is proposed to optimize field plate structures and perform inverse design. The framework combines technology computer‐aided design, machine learning, and optimization, streamlining the design process. GaN High Electron Mobility Transistors (HEMTs) plays a vital role in high‐power and high‐frequency electronics. Meeting the demanding performance requirements of these devices without compromising reliability is a challenging endeavor. Field Plates are employed to redistribute the electric field, minimizing the risk of device failure, especially in high‐voltage operations. While machine learning is applied to GaN device design, its application to field plate structures, known for their geometric complexity, is limited. This study introduces a novel approach to streamlining the field plate design process. It transforms complex 2D field plate structures into a concise feature space, reducing data requirements. A machine learning‐assisted design framework is proposed to optimize field plate structures and perform inverse design. This approach is not exclusive to the design of GaN HEMTs and can be extended to various semiconductor devices with field plate structures. The framework combines technology computer‐aided design (TCAD), machine learning, and optimization, streamlining the design process.

Optimization of Dual Field Plate AlGaN/GaN HEMTs Using Artificial Neural Networks and Particle Swarm Optimization Algorithm

Optimization AlGaN/GaN HEMT with Field Plate Structures

A Novel ANN-PSO Method for Optimizing a Small-Signal Equivalent Model of a Dual-Field-Plate GaN HEMT

Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage

Design Optimization of an Enhanced-Mode GaN HEMT with Hybrid Back Barrier and Breakdown Voltage Prediction Based on Neural Networks

Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor

AI‐assisted Field Plate Design of GaN HEMT Device

Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate

Automatic optimal design of field plate for silicon on insulator lateral double‐diffused metal oxide semiconductor using simulated annealing algorithm

A novel field plate with arcuate end for improving GaN HEMTs

Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks

Design and electrical modelling of a depletion-mode P-type triple-field-plated AlGaN/GaN on SiC HEMT with 2.45 kV breakdown voltage

Effect of jagged field plate structures on DC and RF performance of AlGaN/GaN HEMTs

Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study

Simulation Optimization of AlGaN/GaN SBD with Field Plate Structures and Recessed Anode

Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

Field Plate-Adaptive Doping: A Novel Surface Electric Field Optimization Technique for SOI LDMOS With Gate Field Plate

Novel Drain-Connected Field Plate GaN HEMT Designs for Improved VBD–RON Tradeoff and RF PA Performance