Back contact based T-CAD model for the N1-signal observed in capacitance spectroscopy in CIGS solar cells

Johan Lauwaert

DOI: https://doi.org/10.1016/j.solener.2024.112506

IF: 7.188

2024-04-13

Solar Energy

Abstract:The origin of the N1 signal in capacitance spectroscopy within CIGS solar cells has been a subject of enduring debate. While its characteristics may vary across different specimens and production processes, its impact on solar cell performance at operational temperatures is anticipated to be limited. Nevertheless, the N1 capacitance signal has evolved into a typical illustration of the community's transition from conventional interpretations to the incorporation of computer models to support hypotheses. One potential explication for the origin of the N1 signal lies in the back contact. However, recent publications have raised doubts regarding the credibility of the equivalent circuit model used in replicating N1 signal attributes. The primary contention stems from their findings that certain components within the equivalent circuit require non-physical properties. Moreover N1 signals measured with DLTS apparently consists of multiple peaks. Such an occurrence appears unlikely for a signal origination from a back contact. In this paper, we introduce a TCAD model for a barrier at the rear back contact of a CIGS absorber, employing physically plausible parameters. While no numerical optimization was employed to align with experimental data, the parallels between the experiment and numerical simulations are remarkably conspicuous. Our simulation results affirm that a back contact with physically conceivable parameters can indeed instigate an N1 signal. Furthermore, such a back contact, due to its non-exponentially transient nature, can induce multiple peaks. This study sheds light on a previously contentious topic, advancing our understanding of the N1 signal's origin in CIGS solar cells.

energy & fuels