An Absorber Enrichment Study and Implications on the Performance of Lead-Free CsSnI3 Perovskite Solar Cells (PSCs) Using One-Dimensional Solar Cell Capacitance Simulator (1D-SCAPS)

T. O. Ahmed,T. T. Ibrahim,E. O. Oladimeji,J. D. Koffa

DOI: https://doi.org/10.1007/s13538-023-01406-6

2024-01-18

Brazilian Journal of Physics

Abstract:Extensive research efforts have been made over the last few years to proffer solution to the high recombination rate and stability issues associated with Sn-based perovskite solar cells. In line with this, we modeled cesium tin iodide (CsSnI 3 )–based perovskite solar cell (PSC) with titanium (IV) oxide (TiO 2 ) and copper thiocyanate (CuSCN) as the electron and hole transport materials respectively by employing one-dimensional solar cell capacitance simulator (1D-SCAPS). For the CsSnI 3 -based PSC, n-i-p planar configuration was employed and previously published relevant data were used for the simulation. The results obtained for the initially modeled PSC compared well with similar devices in the literature. Based on the established relationship between charge carrier lifetime and power conversion efficiency (PCE) of a solar cell, we varied defect density in the cesium tin iodide (CsSnI 3 ) from 10 13 to 10 17 cm −3 and studied its influence on the performance parameters of the modeled CsSnI 3 -based PSC. We find that the diffusion length and lifetime of charge carriers are significantly increased with decreasing defect density of the CsSnI 3 absorber. In this study, we report that it is possible to significantly reduce the dominated Shockley–Read–Hall (SRH) high recombination rate occurring in CsSnI 3 perovskite layer even at a low defect density of 10 13 cm −3 by using a combination of SnCl 2 and Br − as additive and dopant respectively for CsSnI 3 enrichment. This strategy ensured a reduced concentration of Sn 4+ vacancy ( V Sn ) in the CsSnI 3 absorber and an improved carrier lifetime beyond 0.05 ns as obtained for the initially modeled CsSnI 3 -based PSC by a magnitude of the order of 10 3 while the diffusion length was improved from 1.1 μm by a magnitude of the order of 10 2 for the enriched CsSnI 3 -based PSC. For the optimized CsSnI 3 -based PSC, we recorded an open-circuit voltage ( V OC ) of magnitude 1.289 V, short-circuit current density ( J SC ) value 32.60 mA∙cm −2 , fill factor (FF) 83.56%, and PCE 35.12%.

physics, multidisciplinary